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SeCoS |
Plastic Encapsulate Transistors * Power Dissipation: PCM: 625 mW (Tamb=25oC) 4.55±0.2 TO-92 3.5±0.2 4.5±0.2 o MAXIMUM RATINGS* TA=25 C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collec |
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SeCoS |
PNP Transistor Low VCE(sat).VCE(sat)≦-0.5V(IC / IB = -0.5A /-50mA) IC =-0.8A Complements of the 2SD1781 A L 3 SOT-23 3 Top View C B 1 2 2 CLASSIFICATION OF hFE Product-Rank Range Marking 2SB1197-P 82~180 AHP 2SB1197-Q 120~270 AHQ 2SB1197-R 180~390 AHR F K 1 |
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SeCoS |
PNP Silicon General Purpose Transistor 2 B 1 G H C J K G Power dissipation : 0.2 W PCM Collector current ICM : -0.5 A * Collector-base voltage V V(BR)CBO : -80 Operating and storage junction temperature range TJ Tstg: -55 to +150 J K L S H 3 2 1 All Dimension in mm COLLECTOR 3 2 |
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SeCoS |
PNP Plastic Encapsulated Transistor High breakdown voltage and high current BVCEO=-80V, IC=-1A Good hFE linearity Complements to 2SD1898 SOT-89 A 1 B 2 C 3 E EC 4 PACKAGE INFORMATION Weight: 0.05 g (approximately) MARKING ZL 1 Base Collector 24 3 Emitter BD F REF. A B C D E |
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SeCoS |
PNP Transistor Power smplifier applications Power dissipation PCM : 1 W £¨ Tamb=25¡æ £© Collector current ICM : - 1.5 A Collector-base voltage V(BR)CBO : -180 V Collector-emitter voltage VCEO 2SB649 : -120 V 2SB649A : -160 V Operating and storage junction temperatu |
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SeCoS |
PNP Plastic Encapsulated Transistor High Collector Power Dissipation Complementary to 2SD1616A G H TO-92 CLASSIFICATION OF hFE(1) Product-Rank Range 2SB1116A-L 135~270 2SB1116A-K 200~400 2SB1116A-U 300~600 K A 1Emitter 2Collector 3Base J D REF. Millimeter Min. Max. 4.40 4.70 4.30 4. |
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SeCoS |
PNP Silicon Medium Power Transistor Low power dissipation 0.5W CLASSIFICATION OF hFE Product Rank 2SB1132-P Range 82~180 Marking BAP 2SB1132-Q 120~270 BAQ 2SB1132-R 180~390 BAR SOT-89 4 123 A EC BD PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7’ inch Collec |
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SeCoS |
PNP Silicon Epitaxial Paner Transistors 3 High DC Current Gain Complementary to 2SD1819A K Top View 1 2 C B 1 2 E D CLASSIFICATION OF hFE Product-Rank Range Marking 2SB1218A-Q 160~260 BQ1 2SB1218A-R 210~340 BR1 2SB1218A-S 290~460 BS1 REF. A B C D E F G Millimeter Min. Max. 1.80 |
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SeCoS |
PNP Silicon Transistor Designed for general Low VCE(sat) D-Pack (TO-252) CLASSIFICATION OF hFE Product-Rank 2SB1412-P 2SB1412-Q Range 82~180 120~270 2SB1412-R 180~390 A BC D PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch Collector 2 1 Base |
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SeCoS |
PNP Silicon General Purpose Transistor For general amplification Complementary of the 2SD601A CLASSIFICATION OF hFE Product-Rank 2SB709A-Q Range 160~260 Marking BQ1 2SB709A-R 210~340 BR1 2SB709A-S 290~460 BS1 PACKAGE INFORMATION Package MPQ SOT-23 3K LeaderSize 7’ inch SOT-2 |
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SeCoS |
PNP Transistor High DC Current Gain. hFE：200 (Typ.) (VCE= -1V, IC= -100mA) Complimentary to 2SD596 MARKING Product-Rank 2SB624-BV1 2SB624-BV2 2SB624-BV3 Range 110~180 135~220 170~270 Product-Rank 2SB624-BV4 2SB624-BV5 Range 200~320 250~400 PACKAGE INF |
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SeCoS |
PNP Transistor |
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SeCoS |
PNP Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free ● Power dissipation PCM: 0.9 W (Tamb=25℃) ● Collector current ICM: -1 A ● Collector-base voltage V(BR)CBO: -60 V ● Operating and storage junction temperature range G TJ, TSTG |
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SeCoS |
PNP Transistor Low Frequency Power Amplifier CLASSIFICATION OF hFE Product-Rank 2SB561-B Range 85~170 2SB561-C 120~240 TO-92 GH J AD B K E CF Emitter Collector Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3 |
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SeCoS |
PNP Transistor Large collector power dissipation PC Complementary to 2SD874A PACKAGE INFORMATION Weight: 0.05 g (approximately) MARKING B = hFE ranking Collector Base Emitter SOT-89 A C D EM B J K F I H G L REF. A B C D E F Millimeter Min |
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SeCoS |
PNP Transistor Power smplifier applications Power dissipation PCM : 1 W £¨ Tamb=25¡æ £© Collector current ICM : - 1.5 A Collector-base voltage V(BR)CBO : -180 V Collector-emitter voltage VCEO 2SB649 : -120 V 2SB649A : -160 V Operating and storage junction temperatu |
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SeCoS |
PNP Silicon Medium Power Transistor b1 Power dissipation P CM : 500mW˄Tamb=25ć˅ 1.BASE Collector current 2.COLLECTOR A ICM : -1 3.EMITTER Collector-base voltage V VB(BR)CBO : -25 Operating and storage junction temperature range TJˈTstg: -55ć to +150ć b L E e e1 C Dim |
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SeCoS |
PNP Silicon Medium Power Transistor Low VCE(sat) RoHS Compliant Product CLASSIFICATION OF hFE Product-Rank 2SB1188-Q Range 120~270 Marking BCQ 2SB1188-R 180~390 BCR SOT-89 123 A EC 4 B F G H J D K L PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7 inch Coll |
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SeCoS |
Low Frequency Transistor Low VCE(sat).VCE(sat)≦ -0.5V (IC / IB= -0.5A /-50mA) IC= -0.8A MECHANICAL DATA Case: SOT-23 CLASSIFICATION OF hFE Product-Rank 2SB1197K-Q Range 120~270 Marking AHQ 2SB1197K-R 180~390 AHR PACKAGE INFORMATION Package MPQ SOT-23 3K Leader |
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SeCoS |
PNP Silicon Medium Power Transistor Symbol Dimensions In Millimeters Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 1.500TYP 2.900 0.900 3.100 1.100 Max 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 Min Dimensions In Inches Max 0.063 0.020 0.022 0.017 0.181 0.071 0.102 0.167 0 |
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Desde 2024. D4U Semiconductor.
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