Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SB1218A |
| Part Number | 2SB1218A |
| Manufacturer | GME |
| Title | PNP Silicon Transistor |
| Description | PNP Silicon Epitaxial Planar Transistor FEATURES High forward current transfer ratio hFE Excellent HFE Linearity. Complements the 2SD1819A. Pb Lead-free APPLICATIONS For general purpose amplification. Production specification 2SB1218A ORDERING INFORMATION Type No. Marking 2SB1218A B. |
| Features |
High forward current transfer ratio hFE Excellent HFE Linearity. Complements the 2SD1819A. Pb Lead-free APPLICATIONS For general purpose amplification. Production specification 2SB1218A ORDERING INFORMATION Type No. Marking 2SB1218A BQ/BR/BS SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -45. |
2SB1218A |
| Part Number | 2SB1218A |
| Manufacturer | SeCoS |
| Title | PNP Silicon Epitaxial Paner Transistors |
| Description | 2SB1218A Elektronische Bauelemente -0.1A , -60V PNP Silicon Epitaxial Paner Transistors RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free APPLICATIONS General Purpose Amplification A L 3 SOT-323 FEATURES 3 High DC Current Gain Complementary to 2SD1819A K Top View 1 . |
| Features |
3 High DC Current Gain Complementary to 2SD1819A K Top View 1 2 C B 1 2 E D CLASSIFICATION OF hFE Product-Rank Range Marking 2SB1218A-Q 160~260 BQ1 2SB1218A-R 210~340 BR1 2SB1218A-S 290~460 BS1 REF. A B C D E F G Millimeter Min. Max. 1.80 2.20 1.80 1.15 0.80 1.20 0.20 2.45 1.35 1.10 1.40 0.40 H J REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 - PACKAGE INFORMA. |
2SB1218A |
| Part Number | 2SB1218A |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon PNP transistor |
| Description | SOT-323 PNP 。Silicon PNP transistor in a SOT-323 Plastic Package. / Features , 2SD1819A 。 High hFE, complements the 2SD1819A. / Applications 。 General amplification. / Equivalent Circuit / Pinning 3 21 PIN1：Emitter PIN 2：Base PIN 3：Collector / Marking hFE Classifications Symbol hFE. |
| Features | , 2SD1819A 。 High hFE, complements the 2SD1819A. / Applications 。 General amplification. / Equivalent Circuit / Pinning 3 21 PIN1：Emitter PIN 2：Base PIN 3：Collector / Marking hFE Classifications Symbol hFE Range Marking Q 160～260 BHQ R 210～340 BHR S 290～460 BHS http://www.fsbrec.com 1/6 2SB1218A Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Vol. |
2SB1218A |
| Part Number | 2SB1218A |
| Manufacturer | TRANSYS Electronics |
| Title | PNP Transistor |
| Description | Transys Electronics L I M I T E D SOT-323 Plastic-Encapsulated Transistors SOT-323 2SB1218A FEATURES Power dissipation PCM: TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR 1. 25¡ À0. 05 1. 01 R EF w.DataSheet4U.com 150 mW (Tamb=25℃) 2. 30¡ À0. 05 Collector current -100 mA ICM: Collector-bas. |
| Features | Power dissipation PCM: TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR 1. 25¡ À0. 05 1. 01 R EF w.DataSheet4U.com 150 mW (Tamb=25℃) 2. 30¡ À0. 05 Collector current -100 mA ICM: Collector-base voltage -45 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. 30¡ À0. 03 Unit: mm ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltag. |
2SB1218A |
| Part Number | 2SB1218A |
| Manufacturer | Jin Yu Semiconductor |
| Title | PNP Transistor |
| Description | 2SB1 21 8 A TRANSISTOR(PNP) FEATURES High DC Current Gain Complementary to 2SD1819A APPLICATIONS General Purpose Amplification MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltag. |
| Features |
High DC Current Gain Complementary to 2SD1819A APPLICATIONS General Purpose Amplification MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Valu. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1218 |
Kexin |
Silicon PNP epitaxial planar type Transistor |
|
| 2 | 2SB1218 |
TY Semiconductor |
Transistor |
|
| 3 | 2SB1218AW |
BL |
PNP Silicon Transistor |
|
| 4 | 2SB1214 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 5 | 2SB1215 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SB1215 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 7 | 2SB1215 |
Kexin |
Transistors |
|
| 8 | 2SB1215 |
ON Semiconductor |
Bipolar Transistor |
|
| 9 | 2SB1216 |
Sanyo Semicon Device |
PNP/NPN Transistor |
|
| 10 | 2SB1216 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
Desde 2024. D4U Semiconductor.
|