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Top 10 Datasheet

Part Number Description
C828
manufacturer
SEMTECH
NPN Silicon Transistor
ST 2SC828 / 828A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. These transistors are subdivided into three groups Q, R and S according to their DC current gain. On special request, these transistors can be manuf...
BTB16-600BW
manufacturer
ARK
16A TRIACS
BTA/BTB16-600BW Available either in through-hole or surface-mount packages, the BTA/BTB16 - 6 00BW triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regu...
K75T60
manufacturer
Infineon Technologies
IGBT
IKW75N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit...
UTC3842
manufacturer
YOUWANG ELECTRONICS
Current Mode PWM Controller
The UTC3842 provides the necessary features to implement off-line or DC to DC fixed frequency current mode control schemes with a minimal external parts count. Internally implemented circuits include under-voltage lockout featuring start up current l...
LM2596
manufacturer
CYStech
3A PWM Buck DC/DC Converter
The LM2596-XXE5/F5 series of regulators are monolithic ICs that provide all active functions for a step-down (buck) switching regulator, capable of driving 3A load with excellent line and load regulation. These devices are available in fixed output v...
SC6531E
manufacturer
Spreadtrum
flash PSRAM and RF transceiver
.....22 l SC6531 Features .........22 ia 1.2.1 Platf...
TDA7851L
manufacturer
STMicroelectronics
4 x 48W MOSFET quad bridge power amplifier
The TDA7851L is a breakthrough MOSFET technology class AB audio power amplifier in Flexiwatt25 package designed for high power car radio. The fully complementary P-Channel/N-Channel output structure allows a rail-to-rail output voltage swing which, c...
XPT9911
manufacturer
XPT
AB / Class D power amplifier
XPT9911 z z z z z z z~ z z z z z z z · · · ·LCD · · DVD / PDA USB 2.1/2.0 XPT9911 2 MODE 4 INN 16 VBYP Bias and Reference 15 PDN 5 VDD Class AB/D Modulator MODE Control PVDD 12,13 Gate OUTP 6,7 Driver OUTN 10,11 PGND 8,9 Internal Oscillator...
A1015
manufacturer
Panasonic Semiconductor
Photo Interrupters
Transmissive Photosensors (Photo Interrupters) CNA1015 Photo Interrupters Overview (2.5) Unit : mm 14.0 5.0±0.15 A 0.5±0.1 Device center 5.0 (C1) 10.0 min. 2.5 CNA1015 series is a transmissive photosensor series in which a high efficiency GaAs ...
70R900P
manufacturer
MagnaChip
N-channel MOSFET
MMIS70R900P is power MOSFET using magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices ...



new electronic component datasheet

Part Number Description
NVH4L160N120SC1
manufacturer
ON Semiconductor
SiC MOSFET
M1, TO-247-4L NVH4L160N120SC1 V(BR)DSS 1200 V RDS(ON) MAX 224 mW @ 20 V D ID MAX 17.3 A Features • Typ. RDS(on) = 160 mW • Ultra Low Gate Charge (QG(tot) = 34 nC) • High Speed Switching with Low Capacitance (Coss = 49.5 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free a
NVH4L040N120SC1
manufacturer
ON Semiconductor
SiC MOSFET
1, TO-247-4L NVH4L040N120SC1 Features • Typ. RDS(on) = 40 mW • Ultra Low Gate Charge (QG(tot) = 106 nC) • High Speed Switching with Low Capacitance (Coss = 137 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second le
NCN26000
manufacturer
ON Semiconductor
10Mb/s Industrial Ethernet 10BASE-T1S Transceiver
(802.3cg Compliant) NCN26000 The NCN26000 device is an IEEE 802.3cg compliant Ethernet Transceiver (PHY) designed for industrial multi−drop Ethernet. It provides all physical layer functions needed to transmit and receive data over a single unshielded twisted−pair. The NCN26000 communicates to existing half−duplex 10
NXV10V160ST1
manufacturer
ON Semiconductor
Automotive Power MOSFET Module
• Electrically Isolated DBC Substrate for Low Thermal Resistance • Temperature Sensing • Compact Design for Low Total Module Resistance • Module Serialization for Full Traceability • AQG324 Qualified and PPAP Capable • Pb−free, RoHS and UL94V−0 Compliant Typical Applications • 48V E−Compressor and Other 48 V Auxiliari
NSBC143ZDXV6
manufacturer
ON Semiconductor
Dual NPN Bias Resistor Transistors
ith Monolithic Bias Resistor Network MUN5233DW1, NSBC143ZDXV6, NSBC143ZDP6 This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a ser
MUN5233DW1
manufacturer
ON Semiconductor
Dual NPN Bias Resistor Transistors
ith Monolithic Bias Resistor Network MUN5233DW1, NSBC143ZDXV6, NSBC143ZDP6 This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a ser
ESDL1012
manufacturer
ON Semiconductor
ESD Protection Diode
for ESD Protection ESDL1012 The ESDL1012 is designed to protect voltage sensitive components that require low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space i
NXV08H250DPT2
manufacturer
ON Semiconductor
Automotive Power MOSFET Module
e At Customer Side this Module Can Be Used as 1/2 Bridge MOSFET Module by Combining 2 Phase Out Power Terminals  Electrically Isolated DBC Substrate for Low Rthjc  Compact Design for Low Total Module Resistance  Module Serialization for Full Traceability  Automotive Qualified by AQG324 Qualification  UL 94 V−0 Com
NSVT5551DW1
manufacturer
ON Semiconductor
Dual-Chip NPN General-Purpose Amplifier
is Designed for General−purpose High Voltage Amplifier • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7−inch/3,000 Unit Tape and Reel • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATING
NCS2001
manufacturer
ON Semiconductor
Rail-to-Rail SingleOperational Amplifier
01 is an industry first sub−one voltage operational amplifier that features a rail−to−rail common mode input voltage range, along with rail−to−rail output drive capability. This amplifier is guaranteed to be fully operational down to 0.9 V, providing an ideal solution for powering applications from a single cell Nickel



updated datasheet

05-1905-2005-2105-2205-2305-2405-2505-2605-2705-2805-2905-3005-3106-0106-0206-0306-0506-0706-0806-0906-1006-1106-1206-1306-1406-1506-1606-1706-1806-1906-2006-2106-2206-2306-2406-2506-2606-2706-2806-2906-3007-0107-0207-0307-0407-0507-0607-0707-0807-0907-1007-1107-1207-1307-1407-1507-1607-1707-1807-19


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