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Top 10 Datasheet

Part Number Description
TL494
manufacturer
Motorola Inc
PULSE WIDTH MODULATION CONTROLLER
The TL494 is a fixed–frequency pulse width modulation control circuit, incorporating the primary building blocks required for the control of a switching power supply. (See Figure 1.) An internal–linear sawtooth oscillator is frequency– programmable b...
BF422
manufacturer
KEC
Silicon NPN Transistor
SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATION. COLOR TV CHROMA OUTPUT APPLICATIONS. FEATURES High Voltage : VCEO>250V Complementary to BF423. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Co...
1N4001
manufacturer
New Jersey Semi-Conductor
General Purpose Plastic Rectifiers
^zmi-Conduekoi Lpioaucii, Una, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 1N4001 thru1N4008 (212) 227-6005 FAX. (973) 375 3950 General Purpose Plastic Rectifiers Reverse Voltage 50 to 1200V Forward Current 1.0A ...
D965
manufacturer
Jiangsu Changjiang Electronics
TRANSISTOR
www.DataSheet4U.com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors D965 FEATURES TRANSISTOR£¨NPN £© TO¡ª 92 1.EMITTER Power dissipation PCM : 0.75 W£¨ Tamb=25¡æ£© Collector current ICM : 5 A Collector-b...
OB3350
manufacturer
On-Bright
Cost Effective LED Controller
OB3350 is a highly integrated and cost effective Light Emitting Diode (LED) driver optimized for LCD monitor and LCD TV backlighting application. It provides a high performance LED backlight solution with minimized BOM count. The OB3350 contains a PW...
7404
manufacturer
STMicroelectronics
TRIPLE VOLTAGE REGULATOR
The M54/74HC04 is a high speed CMOS HEX INVERTER fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. The internal circuit is composed of 3 stages including buffer...
A928A
manufacturer
Fairchild Semiconductor
PNP Epitaxial Silicon Transistor
KSA928A — PNP Epitaxial Silicon Transistor October 2014 KSA928A PNP Epitaxial Silicon Transistor Features • Audio Power Amplifier • Complement to KSC2328A • 3 W Output Application Ordering Information Part Number KSA928AOTA KSA928AYTA Top Mark A...
BTB16-600BW
manufacturer
ARK
16A TRIACS
BTA/BTB16-600BW Available either in through-hole or surface-mount packages, the BTA/BTB16 - 6 00BW triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regu...
XPT9911
manufacturer
XPT
AB / Class D power amplifier
XPT9911 z z z z z z z~ z z z z z z z · · · ·LCD · · DVD / PDA USB 2.1/2.0 XPT9911 2 MODE 4 INN 16 VBYP Bias and Reference 15 PDN 5 VDD Class AB/D Modulator MODE Control PVDD 12,13 Gate OUTP 6,7 Driver OUTN 10,11 PGND 8,9 Internal Oscillator...
78M05
manufacturer
STMicroelectronics
POSITIVE VOLTAGE REGULATORS
...



new electronic component datasheet

Part Number Description
JCS4N60BE
manufacturer
JILIN SINO-MICROELECTRONICS
N-CHANNEL MOSFET
R JCS4N60E JCS4N60E MAIN CHARACTERISTICS Package ID VDSS Rdson_max (Vgs=10V) Qg-typ 4.0 A 600 V 2.35Ω 11.8nC    LED APPLICATIONS  High frequency switching mode power supply  Electronic ballast  LED power supply   Crss ( 2.5pF)    dv/dt RoHS FEATURES Low gate charge Low Crss (typical
JCS4N60RE
manufacturer
JILIN SINO-MICROELECTRONICS
N-CHANNEL MOSFET
R JCS4N60E JCS4N60E MAIN CHARACTERISTICS Package ID VDSS Rdson_max (Vgs=10V) Qg-typ 4.0 A 600 V 2.35Ω 11.8nC    LED APPLICATIONS  High frequency switching mode power supply  Electronic ballast  LED power supply   Crss ( 2.5pF)    dv/dt RoHS FEATURES Low gate charge Low Crss (typical
JCS4N60VE
manufacturer
JILIN SINO-MICROELECTRONICS
N-CHANNEL MOSFET
R JCS4N60E JCS4N60E MAIN CHARACTERISTICS Package ID VDSS Rdson_max (Vgs=10V) Qg-typ 4.0 A 600 V 2.35Ω 11.8nC    LED APPLICATIONS  High frequency switching mode power supply  Electronic ballast  LED power supply   Crss ( 2.5pF)    dv/dt RoHS FEATURES Low gate charge Low Crss (typical
JCS4N60FE
manufacturer
JILIN SINO-MICROELECTRONICS
N-CHANNEL MOSFET
R JCS4N60E JCS4N60E MAIN CHARACTERISTICS Package ID VDSS Rdson_max (Vgs=10V) Qg-typ 4.0 A 600 V 2.35Ω 11.8nC    LED APPLICATIONS  High frequency switching mode power supply  Electronic ballast  LED power supply   Crss ( 2.5pF)    dv/dt RoHS FEATURES Low gate charge Low Crss (typical
JCS4N60E
manufacturer
JILIN SINO-MICROELECTRONICS
N-CHANNEL MOSFET
R JCS4N60E JCS4N60E MAIN CHARACTERISTICS Package ID VDSS Rdson_max (Vgs=10V) Qg-typ 4.0 A 600 V 2.35Ω 11.8nC    LED APPLICATIONS  High frequency switching mode power supply  Electronic ballast  LED power supply   Crss ( 2.5pF)    dv/dt RoHS FEATURES Low gate charge Low Crss (typical
NVHL045N065SC1
manufacturer
ON Semiconductor
SiC MOSFET
Silicon Carbide (SiC) MOSFET – 32 mohm, 650 V, M2, TO-247-3L NVHL045N065SC1 Features • Typ. RDS(on) = 32 mW @ VGS = 18 V Typ. RDS(on) = 42 mW @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • High Speed Switching with Low Capacitance (Coss = 162 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable
NTCR013N120M3S
manufacturer
ON Semiconductor
SiC MOSFET
Silicon Carbide (SiC) MOSFET – EliteSiC, 13 mohm, 1200 V, M3S, Die NTCR013N120M3S Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacit
SZMSQA6V1W5T2G
manufacturer
ON Semiconductor
ESD Protection Diode Array
MSQA6V1W5T2G, SZMSQA6V1W5T2G ESD Protection Diode Array Low Clamping Voltage This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines,
MSQA6V1W5T2G
manufacturer
ON Semiconductor
ESD Protection Diode Array
MSQA6V1W5T2G, SZMSQA6V1W5T2G ESD Protection Diode Array Low Clamping Voltage This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines,
ESD5371
manufacturer
ON Semiconductor
ESD Protection Diode
DATA SHEET www.onsemi.com ESD Protection Diode Micro−Packaged Diodes for ESD Protection ESD5371 The ESD5371 is designed to protect voltage sensitive components that require low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, and fast response time, make t



updated datasheet

05-1905-2005-2105-2205-2305-2405-2505-2605-2705-2805-2905-3005-3106-0106-0206-0306-0506-0706-0806-0906-1006-1106-1206-1306-1406-1506-1606-1706-1806-1906-2006-2106-2206-2306-2406-2506-2606-2706-2806-2906-3007-0107-0207-0307-0407-0507-0607-0707-0807-0907-1007-1107-1207-1307-1407-1507-1607-1707-1807-19


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