Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SB1215 |
| Part Number | 2SB1215 |
| Manufacturer | Sanyo Semicon Device |
| Title | PNP/NPN Epitaxial Planar Silicon Transistors |
| Description | Ordering number:EN2539B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1215/2SD1815 High-Current Switching Applications Applications · Relay drivers, high-speed inverters, converters, and other general high-current switching applications. Features · Low collector-to-emitter saturation voltage. · . |
| Features |
· Low collector-to-emitter saturation voltage. · Excllent linearity of hFE. · Small-sized package permitting 2SB1215/2SD1815- applied sets to be made small and slim. · High fT. · Fast switching time. Package Dimensions unit:mm 2045B [2SB1215/2SD1815] unit:mm 2044B [2SB1215/2SD1815] 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 1 : Base 2 : Collector 3 : Emitter 4 : Collector SAN. |
2SB1215 |
| Part Number | 2SB1215 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·Excellent linearity of hFE ·Small and slim package making it easy to make 2SB1215/2SD1815-used set smaller ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Rel. |
| Features | CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -150mA VBE(sat) Base-Emitter Saturation Voltage IC= -1.5A; IB= -150mA V(BR)CBO Collector-Base Breakdown Voltage IC= -10uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -10uA; IC= 0 ICB. |
2SB1215 |
| Part Number | 2SB1215 |
| Manufacturer | Kexin |
| Title | Transistors |
| Description | SMD Type Transistors Strobe High-Current Switching Applications 2SB1215 TO-252 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low collector-to-emitter saturation voltage. Excllent linearity of hFE. +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 High fT. Fast switching time. . |
| Features | Low collector-to-emitter saturation voltage. Excllent linearity of hFE. +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 High fT. Fast switching time. +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Co. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1214 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 2 | 2SB1216 |
Sanyo Semicon Device |
PNP/NPN Transistor |
|
| 3 | 2SB1216 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 4 | 2SB1216 |
Kexin |
Transistors |
|
| 5 | 2SB1216 |
ON Semiconductor |
Bipolar Transistor |
|
| 6 | 2SB1216 |
Unisonic Technologies |
NPN SILICON TRANSISTOR |
|
| 7 | 2SB1217 |
NEC |
PNP SILICON POWER TRANSISTOR |
|
| 8 | 2SB1217 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 9 | 2SB1217 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 10 | 2SB1218 |
Kexin |
Silicon PNP epitaxial planar type Transistor |
|
Desde 2024. D4U Semiconductor.
|