2SB1217 Datasheet. existencias, precio

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2SB1217 PNP SILICON POWER TRANSISTOR


2SB1217
Part Number 2SB1217
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Inchange Semiconductor
2SB1217
Part Number 2SB1217
Manufacturer Inchange Semiconductor
Title Silicon PNP Power Transistor
Description ·High Collector Current -IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD1818 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC convert.
Features rwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A VBE(sat) Base-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A ICBO Collector Cutoff Current VCB= -60V; IE= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 hFE-1 DC Current Gain IC= -0.2A ; VCE= -2V hFE-2 DC Current Gain IC= -0.6A ; VCE= -2V hFE-3 DC Current Gain IC= -.
BLUE ROCKET ELECTRONICS
2SB1217
Part Number 2SB1217
Manufacturer BLUE ROCKET ELECTRONICS
Title Silicon PNP transistor
Description TO-126F PNP 。Silicon PNP transistor in a TO-126F Plastic Package.  / Features ,,, 2SD1818 。 Low VCE(sat),large current, high PC, complementary to 2SD1818. / Applications DC-DC ,。 It is suitable for DC-DC converter, or driver of solenoid or motor. / Equivalent Circuit / Pinning 12 3 .
Features ,,, 2SD1818 。 Low VCE(sat),large current, high PC, complementary to 2SD1818. / Applications DC-DC ,。 It is suitable for DC-DC converter, or driver of solenoid or motor. / Equivalent Circuit / Pinning 12 3 PIN1:Emitter PIN 2:Collector PIN 3:Base / hFE Classifications & Marking hFE Classifications Symbol hFE Range M 100~200 L 160~320 K 200~400 http://www.fsbrec.com 1/6 2SB1217 .

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