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2SB1215 |
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| Part Number | 2SB1215 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Excellent linearity of hFE ·Small and slim package making it easy to make 2SB1215/2SD1815-used set smaller ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·M... |
| Features |
CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -150mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -1.5A; IB= -150mA
V(BR)CBO Collector-Base Breakdown Voltage IC= -10uA; IB= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -10uA; IC= 0
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE1
DC Current Gain
IC= -0.5A; VCE= -5V
hFE2
DC Current Gain
IC= -2A; VCE= -5V
COB
Output Capacit... |
| Document |
 2SB1215 Data Sheet
PDF 253.99KB |
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Desde 2024. D4U Semiconductor.
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