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| Distributor | Stock | Price | Buy |
|---|
2SB772 |
| Part Number | 2SB772 |
| Manufacturer | NEC |
| Title | PNP SILICON POWER TRANSISTOR |
| Description | The 2SB772 is PNP silicon transistor suited for the output stage of 3 W audio amplifier, voltage regulator, DC-DC converter and relay driver. PACKAGE DRAWING (Unit: mm) 8.5 MAX. 3.2 ±0.2 3.8 ±0.2 2.8 MAX. FEATURES • Low saturation voltage VCE(sat) ≤ −0.5 V (IC = −2 A, IB = −0.2 A) • Excellent hFE. |
| Features |
• Low saturation voltage VCE(sat) ≤ −0.5 V (IC = −2 A, IB = −0.2 A) • Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = −2 V, IC = −1 A) • Less cramping space required due to small and thin package and reducing the trouble for attachment to a radiator. No insulator bushing required. 12.0 MAX. 2.5 ±0.2 13.0 MIN. ABSOLUTE MAXIMUM RATINGS Maximum Temperature Storage Temperature −55 to +150. |
2SB772 |
| Part Number | 2SB772 |
| Manufacturer | SeCoS |
| Title | Plastic Encapsulate Transistors |
| Description | 2SB772 Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free PNP Type Plastic Encapsulate Transistors Features * Power Dissipation: PCM: 625 mW (Tamb=25oC) 4.55±0.2 TO-92 3.5±0.2 4.5±0.2 o MAXIMUM RATINGS* TA=25 C unless otherwise noted Symbol VCBO VCEO . |
| Features |
* Power Dissipation: PCM: 625 mW (Tamb=25oC)
4.55±0.2
TO-92
3.5±0.2
4.5±0.2
o
MAXIMUM RATINGS* TA=25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current –Continuous Collector Dissipation Junction Temperature Storage Temperature Value -40 -30 -6 -3 0.625 150 -55~150 Units V V V A W o 14.3±0. |
2SB772 |
| Part Number | 2SB772 |
| Manufacturer | Unisonic Technologies |
| Title | MEDIUM POWER LOW-VOLTAGE TRANSISTOR |
| Description | The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SD882 ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2S. |
| Features | * High current output up to 3A * Low saturation voltage * Complement to 2SD882 ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SB772L-x-T60-K 2SB772G-x-T60-K TO-126 2SB772L-x-T6C-K 2SB772G-x-T6C-K TO-126C 2SB772L-x-TM3-T 2SB772G-x-TM3-T TO-251 2SB772L-x-TN3-R 2SB772G-x-TN3-R TO-252 2SB772L-x-T9N-B 2SB772G-x-T9N-B TO-92NL 2SB772L-x-T9N-K 2SB772G-x-T9N-K . |
2SB772 |
| Part Number | 2SB772 |
| Manufacturer | Kexin |
| Title | PNP Silicon Power Transistor |
| Description | SMD Type PNP Silicon Power Transistor 2SB772 Features Low saturation voltage. VCE(sat) -0.5(@ IC=-2A,IB=-0.2A) Transistors Excellent hFE hFE: 60 to 400 (@VCE=-2V,IC=-1A) Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Colle. |
| Features | Low saturation voltage. VCE(sat) -0.5(@ IC=-2A,IB=-0.2A) Transistors Excellent hFE hFE: 60 to 400 (@VCE=-2V,IC=-1A) Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector Power dissipation TA = 25 TC = 25 Junction temperature Storage temperature range * PW 350ìS,duty cycle 2%. Tj Tstg Symbol VCBO VCEO. |
2SB772 |
| Part Number | 2SB772 |
| Manufacturer | ST Microelectronics |
| Title | PNP MEDIUM POWER TRANSISTOR |
| Description | The device is a PNP transistor manufactured by using planar Technology resulting in rugged high performance devices. The complementary NPN type is 2SD882. 1 2 3 SOT-32 (TO-126) Figure 1. Internal schematic diagram Table 1. Device summary Order code 2SB772 Marking B772 Package SOT-32 Packing Tub. |
| Features |
■ High current ■ Low saturation voltage ■ Complement to 2SD882 Applications ■ Voltage regulation ■ Relay driver ■ Generic switch ■ Audio power amplifier ■ DC-DC converter Description The device is a PNP transistor manufactured by using planar Technology resulting in rugged high performance devices. The complementary NPN type is 2SD882. 1 2 3 SOT-32 (TO-126) Figure 1. Internal schematic diagram T. |
2SB772 |
| Part Number | 2SB772 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistors |
| Description | ·High Collector Current -IC= -3A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD882 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in the output. |
| Features | ISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -0.2A ICBO Collector Cutoff Current VCB= -30V; IE= 0 IEBO Emitter Cutoff Current VEB= -3V; IC= 0 hFE-1 DC Current Gain IC= -20mA ; VCE= -2V hFE-2 DC Current Gain IC= -1A ; VCE= -2V fT Current-. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB77 |
ETC |
Transistor |
|
| 2 | 2SB77 |
Hitachi |
Transistor |
|
| 3 | 2SB772B |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 4 | 2SB772D |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 5 | 2SB772D |
Dc Components |
PNP Transistor |
|
| 6 | 2SB772G |
UTC |
MEDIUM POWER LOW-VOLTAGE TRANSISTOR |
|
| 7 | 2SB772I |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 8 | 2SB772L |
UTC |
MEDIUM POWER LOW-VOLTAGE TRANSISTOR |
|
| 9 | 2SB772L |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 10 | 2SB772L |
SeCoS |
PNP Transistor |
|
Desde 2024. D4U Semiconductor.
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