Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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2SB1424 |
| Part Number | 2SB1424 |
| Manufacturer | Power Silicon |
| Title | PNP Transistor |
| Description | DATA SHEET 2SB1424 PNP GENERAL PURPOSE TRANSISTORS VOLTAGE -20 Volts CURRENT -3.0 Ampere FEATURES z PNP SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS z LOW COLLECTOR-EMITTER SATURATION VOLTAGE VCE(SAT) = -0.2V (TYP.) z COLLECTOR CURRENT IC/ IB = -2A / -0.1A .181 (4.6. |
| Features | z PNP SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS z LOW COLLECTOR-EMITTER SATURATION VOLTAGE VCE(SAT) = -0.2V (TYP.) z COLLECTOR CURRENT IC/ IB = -2A / -0.1A .181 (4.6) .173( 4.4) .061 (1.55)REF. 0.063 (1.6 ) 0.055 (145 ) .1 6 7( 4. 2 5) . 15 5 (3 .9 4 ) . 10 2 (2 .6 ) .0 91 (2 .3) 1. 2 0 .9 MECHANICAL DATA z CASE：SOT-89,PLASTIC z TERMINALS：SOLDERABLE PER MIL. |
2SB1424 |
| Part Number | 2SB1424 |
| Manufacturer | HOTTECH |
| Title | PNP Transistor |
| Description | Plastic-Encapsulate Transistors FEATURES • Low VCE(SAT) =-0.2V(Typ.) (IC/IB=-2A/-0.1mA). • Excellent DC current gain characterisitics. • Complementary the 2SD2150. 2SB1424 (PNP) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Curren. |
| Features |
• Low VCE(SAT) =-0.2V(Typ.) (IC/IB=-2A/-0.1mA). • Excellent DC current gain characterisitics. • Complementary the 2SD2150. 2SB1424 (PNP) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Storage Temperature unless otherwise noted) Symbol Value VCBO -20 VCEO -20 VEBO -6 IC -3 . |
2SB1424 |
| Part Number | 2SB1424 |
| Manufacturer | GME |
| Title | Transistor |
| Description | Production specification Low VCE(sat) Transistor(-20V,-3A) FEATURES Low VCE(SAT)=-0.2V(Typ.) (IC/IB=-2A/-0.1mA). Pb Lead-free Excellent DC current gain characterisitics. Complementary the 2SD2150. 2SB1424 APPLICATIONS This device is designed as a general purpose amplifier and switchin. |
| Features |
Low VCE(SAT)=-0.2V(Typ.) (IC/IB=-2A/-0.1mA). Pb Lead-free Excellent DC current gain characterisitics. Complementary the 2SD2150. 2SB1424 APPLICATIONS This device is designed as a general purpose amplifier and switching. ORDERING INFORMATION Type No. Marking 2SB1424 AEQ/AER SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value V. |
2SB1424 |
| Part Number | 2SB1424 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon PNP transistor |
| Description | SOT-89 PNP 。Silicon PNP transistor in a SOT-89 Plastic Package. / Features ，。 Low VCE(sat),excellent DC current gain characteristics. / Applications 。 General purpose amplifier. / Equivalent Circuit / Pinning 1 2 3 PIN1：Base PIN 2：Collector / Marking hFE Classifications Symbol hFE . |
| Features | ，。 Low VCE(sat),excellent DC current gain characteristics. / Applications 。 General purpose amplifier. / Equivalent Circuit / Pinning 1 2 3 PIN1：Base PIN 2：Collector / Marking hFE Classifications Symbol hFE Range Marking Q 120～270 HAEQ ** ** PIN 3：Emitter R 180～390 HAER http://www.fsbrec.com 1/6 2SB1424 Rev.E Mar.-2016 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter C. |
2SB1424 |
| Part Number | 2SB1424 |
| Manufacturer | Weitron Technology |
| Title | Epitaxial Planar PNP Transistors |
| Description | 2SB1424 Epitaxial Planar PNP Transistors P b Lead(Pb)-Free 1 1. BASE 2. COLLECTOR 3. EMITTER SOT-89 2 3 C) ABSOLUTE MAXIMUM RATINGS (Ta=25% Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature, Storage Temp. |
| Features | Unit Parameter Symbol Conditions DC Current Transfer Ratio Collector-Emitter Saturation Voltage Transition Frequency Output Capacitance CLASSIFICATION OF hFE Marking Rank Range AEQ Q 120-270 VCE(sat) h FE fT Cob 120 - 240 35 -0.5 390 - V - Ic / IB =-2A / -0.1A Vc E =-2V, Ic = -0.1A MHz Vc E =-2V, I E = 0.5A, f=100MHz pF VCB=-10V, I E =0A, f=1MHz AER R 180-390 ELECTRICAL CHARACTERISTIC . |
2SB1424 |
| Part Number | 2SB1424 |
| Manufacturer | TRANSYS |
| Title | Plastic-Encapsulate Transistors |
| Description | Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulate Transistors 2SB1424 FEATURES Power dissipation PCM: 600 mW (Tamb=25℃) 2. COLLECTOR 3. EMITTER 1 2 3 TRANSISTOR (PNP) SOT-89 1. BASE Collector current -3 A ICM: Collector-base voltage -20 V V(BR)CBO: Operating and storage junction tempe. |
| Features | Power dissipation PCM: 600 mW (Tamb=25℃) 2. COLLECTOR 3. EMITTER 1 2 3 TRANSISTOR (PNP) SOT-89 1. BASE Collector current -3 A ICM: Collector-base voltage -20 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collec. |
2SB1424 |
| Part Number | 2SB1424 |
| Manufacturer | SeCoS |
| Title | PNP Silicon Medium Power Transistor |
| Description | 2SB1424 Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free D D1 A PNP Silicon Medium Power Transistor E1 b1 1.BASE SOT-89 b L 2.COLLECTOR 3. EMITTER E e e1 C FEATURES Symbol Dimensions In Millimeters Min 1.400 0.320 0.360 0.350 4.4. |
| Features | Symbol Dimensions In Millimeters Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 1.500TYP 2.900 0.900 3.100 1.100 Max 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 Min Dimensions In Inches Max 0.063 0.020 0.022 0.017 0.181 0.071 0.102 0.167 0.060TYP 0.114 0.035 0.122 0.043 Power dissipation : 600 mW Temp.=25 PCM Collector current : -3 A ICM Collector-base voltage V V(BR)CBO : -20 Operatin. |
2SB1424 |
| Part Number | 2SB1424 |
| Manufacturer | UTC |
| Title | TRANSISTOR |
| Description | Preliminary PNP SILICON TRANSISTOR TRANSISTOR As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage). FEATURES * Very good DC current gain * Very low VCE(SAT)=-0.2V@ IC/IB=(-2A)/(-0.1A) Lead-. |
| Features | * Very good DC current gain * Very low VCE(SAT)=-0.2V@ IC/IB=(-2A)/(-0.1A) Lead-free: 2SB1424L Halogen-free: 2SB1424G ORDERING INFORMATION Normal 2SB1424-x-AB3-R Ordering Number Lead Free 2SB1424L-x-AB3-R Halogen Free 2SB1424G-x-AB3-R Package SOT-89 Pin Assignment 1 2 3 B C E Packing Tape Reel www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd 1 of 2 QW-R208-044,a Free Da. |
2SB1424 |
| Part Number | 2SB1424 |
| Manufacturer | Jin Yu Semiconductor |
| Title | TRANSISTOR |
| Description | 2SB1 424 TRANSISTOR(PNP) SOT-89-3L FEATURES Excellent DC Current Gain Low Collector-emitter saturation voltage Complement the 2SD2150 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage C. |
| Features |
Excellent DC Current Gain Low Collector-emitter saturation voltage Complement the 2SD2150 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Te. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1420 |
Sanken electric |
Silicon PNP Transistor |
|
| 2 | 2SB1420 |
INCHANGE |
PNP Transistor |
|
| 3 | 2SB1421 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SB1424 |
Kexin |
Transistor |
|
| 5 | 2SB1424-HF |
Kexin |
PNP Transistors |
|
| 6 | 2SB1426 |
Dc Components |
PNP Transistor |
|
| 7 | 2SB1426 |
SeCoS |
PNP Transistor |
|
| 8 | 2SB1426 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 9 | 2SB1426 |
JCET |
PNP Transistor |
|
| 10 | 2SB1426 |
LZG |
SILICON PNP TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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