Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SB561 |
| Part Number | 2SB561 |
| Manufacturer | Hitachi Semiconductor |
| Title | Silicon PNP Transistor |
| Description | 2SB561 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD467 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SB561 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collec. |
| Features |
—
Unit V V V µA
Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –20 V, IE = 0 VCE = –1 V, I C = –0.15 A (Pulse test) VCE(sat) VBE fT Cob V V MHz pF I C = –0.5 A, IB = –0.05 A VCE = –1 V, IC = –0.15 A VCE = –1 V, IC = –0.15 A VCB = –10 V, IE = 0 f = 1 MHz 1. The 2SB561 is grouped by hFE as follows. C 120 to 240 2 2SB561 Maximum Collector Dissipation Cur. |
2SB561 |
| Part Number | 2SB561 |
| Manufacturer | Renesas |
| Title | Silicon PNP Transistor |
| Description | 2SB561 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD467 Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) REJ03G0645-0200 (Previous ADE-208-1023) Rev.2.00 Aug.10.2005 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Item . |
| Features |
mitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance
VCE(sat) VBE fT Cob
— –0.2 –0.5 — –0.75 –1.0 — 350 — — 20 — Note: 1. The 2SB561 is grouped by hFE as follows. B C 85 to 170 120 to 240 Unit V V V µA V V MHz pF (Ta = 25°C) Test conditions IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 µA, IC = 0 VCB = –20 V, IE = 0 VCE = –1 V, IC . |
2SB561 |
| Part Number | 2SB561 |
| Manufacturer | SeCoS |
| Title | PNP Transistor |
| Description | Elektronische Bauelemente 2SB561 -0.7A , -25V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low Frequency Power Amplifier CLASSIFICATION OF hFE Product-Rank 2SB561-B Range 85~170 2SB561-C 120~240 TO-92 GH J AD B K E CF . |
| Features |
Low Frequency Power Amplifier CLASSIFICATION OF hFE Product-Rank 2SB561-B Range 85~170 2SB561-C 120~240 TO-92 GH J AD B K E CF Emitter Collector Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.36 0.76 Base ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Paramet. |
2SB561 |
| Part Number | 2SB561 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon PNP transistor |
| Description | TO-92 PNP 。Silicon PNP transistor in a TO-92 Plastic Package. / Features 2SD467 。 Complementary pair with 2SD467. / Applications 。 Low frequency power amplifier. / Equivalent Circuit / Pinning 1 23 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Clas. |
| Features | 2SD467 。 Complementary pair with 2SD467. / Applications 。 Low frequency power amplifier. / Equivalent Circuit / Pinning 1 23 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range B 85~170 C 120~240 http://www.fsbrec.com 1/6 2SB561 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Col. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB560 |
Sanyo Semicon Device |
Epitaxial Planar Silicon Transistor |
|
| 2 | 2SB560 |
KOO CHIN |
PNP Transistor |
|
| 3 | 2SB562 |
Hitachi Semiconductor |
Silicon PNP Transistor |
|
| 4 | 2SB562 |
Renesas |
Silicon PNP Transistor |
|
| 5 | 2SB562 |
UTC |
PNP EPITAXIAL SILICON TRANSISTOR |
|
| 6 | 2SB563 |
INCHANGE |
PNP Transistor |
|
| 7 | 2SB563 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SB564 |
Micro Electronics |
SILICON TRANSISTOR |
|
| 9 | 2SB564A |
Dc Components |
PNP Transistor |
|
| 10 | 2SB564A |
Usha |
Transistors |
|
Desde 2024. D4U Semiconductor.
|