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| Distributor | Stock | Price | Buy |
|---|
2SB563 |
| Part Number | 2SB563 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max) @IC= -3A ·Complement to Type 2SD297 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplif. |
| Features | or-Base Breakdown Voltage IC= -1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -0.3A ICBO Collector Cutoff Current VCB= -80V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -1A; VCE= -2V 2SB563 MIN TYP. MAX UNIT -80 . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB560 |
Sanyo Semicon Device |
Epitaxial Planar Silicon Transistor |
|
| 2 | 2SB560 |
KOO CHIN |
PNP Transistor |
|
| 3 | 2SB561 |
Hitachi Semiconductor |
Silicon PNP Transistor |
|
| 4 | 2SB561 |
Renesas |
Silicon PNP Transistor |
|
| 5 | 2SB561 |
LZG |
SILICON PNP TRANSISTOR |
|
| 6 | 2SB561 |
SeCoS |
PNP Transistor |
|
| 7 | 2SB561 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 8 | 2SB562 |
Hitachi Semiconductor |
Silicon PNP Transistor |
|
| 9 | 2SB562 |
Renesas |
Silicon PNP Transistor |
|
| 10 | 2SB562 |
UTC |
PNP EPITAXIAL SILICON TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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