Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SB1132 |
| Part Number | 2SB1132 |
| Manufacturer | Rohm |
| Title | PNP Transistor |
| Description | Medium Power Transistor (32V,1A) 2SB1132 / 2SA1515S / 2SB1237 Features 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) (IC / IB = 500mA / 50mA) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon transistor Dimensions (Unit : mm) 2SB1132 4.5 +0.2 −0.1 1.6 +− 0.1 1.5 . |
| Features |
1) Low VCE(sat).
VCE(sat) = 0.2V(Typ.) (IC / IB = 500mA / 50mA) 2) Compliments 2SD1664 / 2SD1858
Structure Epitaxial planar type PNP silicon transistor Dimensions (Unit : mm) 2SB1132 4.5 +0.2 −0.1 1.6 +− 0.1 1.5 +0.2 −0.1 2SA1515S 4 +− 0.2 2 +− 0.2 3 −+ 0.2 0.5 −+ 0.1 3Min. +0.2 −0.1 4.0 −+ 0.3 (15Min.) 2.5 1.0 −+ 0.2 (1) (2) (3) 0.4 +− 0.1 1.5 +− 0.1 0.5 +− 0.1 3.0 +− 0.2. |
2SB1132 |
| Part Number | 2SB1132 |
| Manufacturer | TRANSYS |
| Title | Transistors |
| Description | Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SB1132 FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) TRANSISTOR (PNP) SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Collector current -1 A ICM: Collector-base voltage V V(BR)CBO: -40 Operating and storage junction temper. |
| Features | Power dissipation PCM: 0.5 W (Tamb=25℃) TRANSISTOR (PNP) SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Collector current -1 A ICM: Collector-base voltage V V(BR)CBO: -40 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-bas. |
2SB1132 |
| Part Number | 2SB1132 |
| Manufacturer | SeCoS |
| Title | PNP Silicon Medium Power Transistor |
| Description | Elektronische Bauelemente 2SB1132 -1A, -40V PNP Silicon Medium Power Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low power dissipation 0.5W CLASSIFICATION OF hFE Product Rank 2SB1132-P Range 82~180 Marking BAP 2SB1132-Q 120~270 BAQ 2SB1132-R . |
| Features |
Low power dissipation 0.5W CLASSIFICATION OF hFE Product Rank 2SB1132-P Range 82~180 Marking BAP 2SB1132-Q 120~270 BAQ 2SB1132-R 180~390 BAR SOT-89 4 123 A EC BD PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7’ inch Collector Base Emitter FG H J K L REF. A B C D E F Millimeter Min. 4.40 3.94 1.40 Max. 4.60 4.25 1.60 2.30 2.60 1.50 1.70 0.89 1.2 RE. |
2SB1132 |
| Part Number | 2SB1132 |
| Manufacturer | WILLAS |
| Title | Plastic-Encapsulate Transistors |
| Description | WILLAS S1O.0AT-S8UR9FAPClEaMsOtUicN-TESCnHcOaTTpKsYuBlAaRtReIERTrRaECnTsIFiIEsRtSo-r2s0V- 200V SOD-123+ PACKAGE FM120-M+ 2SB1132THRU FM1200-M+ Pb Free Product Features TRANS•IBSaTtcOhRpro(PceNsPs d) esign, excellent power dissipation offers FEATU•RLbEoewStteprrroefvileerssuerlfeaackeamgoeucnutrer. |
| Features |
TRANS •IBSaTtcOhRpro(PceNsPs d) esign, excellent power dissipation offers FEATU •RLbEoewStteprrroefvileerssuerlfeaackeamgoeucnutrerdenatpapnlidcathtieornmianlorredseisr ttaonce. z LowopVtiCmEi(zseat)board space. z Pb • •-HLFoirgwehpecouwprreaerncltokcsaasp,gaheibgihliitsey,fflaiocvwieafnoicrlywa. abrldevoltage drop. Ro •HHSighpsruorgdeuccatpafobirlitpy.acking code suffix ”G” • Guardring for overvolt. |
2SB1132 |
| Part Number | 2SB1132 |
| Manufacturer | GME |
| Title | PNP General Purpose Amplifier |
| Description | Production specification PNP General Purpose Amplifier FEATURES z Low VCE(SAT)=-0.2V(Typ.) (IC/IB=-500mA/-50mA). z Complementary NPN type available 2SD1664. Pb Lead-free 2SB1132 APPLICATIONS z This device is designed as a general purpose amplifier and switching. ORDERING INFORMATION Type No. . |
| Features | z Low VCE(SAT)=-0.2V(Typ.) (IC/IB=-500mA/-50mA). z Complementary NPN type available 2SD1664. Pb Lead-free 2SB1132 APPLICATIONS z This device is designed as a general purpose amplifier and switching. ORDERING INFORMATION Type No. Marking 2SB1132 BAP/BAQ/BAR SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base V. |
2SB1132 |
| Part Number | 2SB1132 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon PNP transistor |
| Description | SOT-89 PNP 。Silicon PNP transistor in a SOT-89 Plastic Package. / Features , 2SD1664 。 Low VCE(sat),complements the 2SD1664. / Applications 。 Medium power amplifier applications. / Equivalent Circuit / Pinning 1 2 3 PIN1：Base PIN 2：Collector / Marking hFE Classifications Symbol . |
| Features | , 2SD1664 。 Low VCE(sat),complements the 2SD1664. / Applications 。 Medium power amplifier applications. / Equivalent Circuit / Pinning 1 2 3 PIN1：Base PIN 2：Collector / Marking hFE Classifications Symbol hFE Range Marking P 82～180 HBAP PIN 3：Emitter Q 120～270 HBAQ R 180～390 HBAR ** ** ** http://www.fsbrec.com 1/6 2SB1132 Rev.D Nov.-2015 DATA SHEET / Absolute Maximum Rating. |
2SB1132 |
| Part Number | 2SB1132 |
| Manufacturer | Weitron Technology |
| Title | PNP Plastic-Encapsulate Transistors |
| Description | 2SB1132 PNP Plastic-Encapsulate Transistors SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 C) ABSOLUTE MAXIMUM RATINGS (Ta=25% Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCBO VCEO VEBO IC ICP Collector Power Dissipation Junction Temperature. |
| Features | ERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC= -100 mAdc, VCE= -3 Vdc) Collector-Emitter Saturation Voltage (IC= -500 mAdc, I B = -50mAdc) Transition Frequency (IC= -50mAdc, VCE=-5 Vdc, f=30MHz) Collector Output Capacitance (IE= 0, VCB=-10 Vdc, f=1MHz) hFE VCE(sat) fT Cob 82 150 20 390 -0.5 Vdc 30 MHz PF CL. |
2SB1132 |
| Part Number | 2SB1132 |
| Manufacturer | Kexin |
| Title | Medium Power Transistor |
| Description | SMD Type Medium Power Transistor 2SB1132 Transistors Features Low VCE(sat) Compliments to 2SD1664 Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Single pulse, PW =100ms Collector Power Dissipation Jumction te. |
| Features | Low VCE(sat) Compliments to 2SD1664 Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Single pulse, PW =100ms Collector Power Dissipation Jumction temperature Storage temperature Range * mounted on a 40x40x0.7mm ceramic board. PC * Tj Tstg Symbol VCBO VCEO VEBO IC Rating -40 -32 -5 -1 -2 0.5 150 -55 to +150 Unit. |
2SB1132 |
| Part Number | 2SB1132 |
| Manufacturer | HOTTECH |
| Title | PNP Transistor |
| Description | Plastic-Encapsulate Transistors FEATURES • Low VCE(sat): -0.2V(Typ) IC/IB=-500mA/-50mA • Compliments 2SD1664 2SB1132 (PNP) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temp. |
| Features |
• Low VCE(sat): -0.2V(Typ) IC/IB=-500mA/-50mA • Compliments 2SD1664 2SB1132 (PNP) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO -40 VCEO -32 VEBO -5 IC 1 PC 500 TJ 150 Tstg -55to +150 Un. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1130AM |
Rohm |
Epitaxial Planar PNP Silicon Transistor |
|
| 2 | 2SB1131 |
Sanyo Semicon Device |
PNP Transistor |
|
| 3 | 2SB1132 |
JCET |
PNP Transistor |
|
| 4 | 2SB1132 |
AiT Components |
MEDIUM POWER TRANSISTOR |
|
| 5 | 2SB1132 |
UTC |
MEDIUM POWER TRANSISTOR |
|
| 6 | 2SB1132-HF |
Kexin |
PNP Transistors |
|
| 7 | 2SB1132-P |
MCC |
PNP Transistors |
|
| 8 | 2SB1132-Q |
MCC |
PNP Transistors |
|
| 9 | 2SB1132-R |
MCC |
PNP Transistors |
|
| 10 | 2SB1132PT |
Chenmko Enterprise |
PNP Medium Power Transistor |
|
Desde 2024. D4U Semiconductor.
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