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2SB1132 |
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| Part Number | 2SB1132 |
| Manufacturer | TRANSYS |
| Description | Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SB1132 FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) TRANSISTOR (PNP) SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Coll... |
| Features |
Power dissipation PCM: 0.5 W (Tamb=25℃) TRANSISTOR (PNP)
SOT-89
1. BASE 2. COLLECTOR 3. EMITTER 1 2 3
Collector current -1 A ICM: Collector-base voltage V V(BR)CBO: -40 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(... |
| Document |
 2SB1132 Data Sheet
PDF 81.28KB |
Desde 2024. D4U Semiconductor.
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