Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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2SB1260 |
| Part Number | 2SB1260 |
| Manufacturer | Rohm |
| Title | Power Transistor |
| Description | 2SB1260 / 2SB1181 PNP -1.0A -80V Middle Power Transistor Parameter VCEO IC Value -80V -1.0A lOutline MPT3 Base Collector Emitter lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1898 / 2SD1733 3) Low VCE(sat) VCE(sat)= -0.4V Max. (IC/IB= -500mA/ -50mA) 4) Lead Free/R. |
| Features |
1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1898 / 2SD1733 3) Low VCE(sat)
VCE(sat)= -0.4V Max. (IC/IB= -500mA/ -50mA)
4) Lead Free/RoHS Compliant.
2SB1260 (SC-62) |
2SB1260 |
| Part Number | 2SB1260 |
| Manufacturer | WILLAS |
| Title | Plastic-Encapsulate Transistors |
| Description | WILLAS SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FM120-M+ 2SB1260 THRU FM1200-M+ Pb Free Product Features • Batch process design, excellent power dissipation offers TRANSbISetTteOr rRev(ePrsNePle)akage current and thermal res. |
| Features |
• Batch process design, excellent power dissipation offers TRANSbISetTteOr rRev(ePrsNePle)akage current and thermal resistance. FEATU • RLoEwSprofile surface mounted application in order to z optimize board space. Po • wLoewr pTorwaenrsliosstso,rhigh efficiency. z H •igHhigVhoclutarrgeent acanpdabCiluitryr,elonwt forward voltage drop. z Lo • •wGHiuCgahordsllrueirncggetofocrar-epoavmebiritlvittoeyl. |
2SB1260 |
| Part Number | 2SB1260 |
| Manufacturer | JinYu |
| Title | PNP Transistor |
| Description | 2SB1 260 TRANSISTOR(PNP) SOT-89-3L FEATURES z Power Transistor z High Voltage and Current z Low Collector-emitter saturation voltage z Complements the 2SD1898 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Col. |
| Features | z Power Transistor z High Voltage and Current z Low Collector-emitter saturation voltage z Complements the 2SD1898 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction T. |
2SB1260 |
| Part Number | 2SB1260 |
| Manufacturer | Kexin |
| Title | PNP Transistors |
| Description | SMD Type Power Transistor 2SB1260 Features High breakdown voltage and high current.BVCEO= -80V, IC=-1A Good hFE linearity. Low VCE(sat). Epitaxial planar type PNP silicon transistor Transistors Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-ba. |
| Features | High breakdown voltage and high current.BVCEO= -80V, IC=-1A Good hFE linearity. Low VCE(sat). Epitaxial planar type PNP silicon transistor Transistors Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(Pulse) Collector power dissipation Junction temperature Storage temperature * Single pulse, Pw=100. |
2SB1260 |
| Part Number | 2SB1260 |
| Manufacturer | JCET |
| Title | PNP Transistor |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1260 TRANSISTOR (PNP) FEATURES z Power Transistor z High Voltage and Current z Low Collector-emitter saturation voltage z Complements the 2SD1898 SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATIN. |
| Features | z Power Transistor z High Voltage and Current z Low Collector-emitter saturation voltage z Complements the 2SD1898 SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From . |
2SB1260 |
| Part Number | 2SB1260 |
| Manufacturer | SeCoS |
| Title | PNP Plastic Encapsulated Transistor |
| Description | Elektronische Bauelemente 2SB1260 -1 A, -80 V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High breakdown voltage and high current BVCEO=-80V, IC=-1A Good hFE linearity Complements to 2SD1898 SOT-89 A 1 B 2 C 3 E EC 4 P. |
| Features | High breakdown voltage and high current BVCEO=-80V, IC=-1A Good hFE linearity Complements to 2SD1898 SOT-89 A 1 B 2 C 3 E EC 4 PACKAGE INFORMATION Weight: 0.05 g (approximately) MARKING ZL 1 Base Collector 24 3 Emitter BD F REF. A B C D E F G H J Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.30 2.60 1.50 1.70 0.89 1.20 K L REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 T. |
2SB1260 |
| Part Number | 2SB1260 |
| Manufacturer | Weitron Technology |
| Title | PNP Plastic-Encapsulate Transistor |
| Description | 2SB1260 PNP Plastic-Encapsulate Transistor SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 C) ABSOLUTE MAXIMUM RATINGS (Ta=25% Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC I CP Collector Power Dissipation Junction Temperature. |
| Features | rwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC=-0.1 Adc, VCE=-3.0 Vdc) Collector-Emitter Saturation Voltage (IC=-500 mAdc, IB=-50mAdc) Transition Frequency (IC=-50 mAdc, VCE=-5.0 Vdc,f=30 MHz) hFE VCE(sat) fT 82 390 -0.4 Vdc MHz 80 CLASSIFICATION OF hFE Item Range P 82-180 Q 120-270 R 180-390 WEITRON http://www.weitron.com.tw 2SB1260 -. |
2SB1260 |
| Part Number | 2SB1260 |
| Manufacturer | HOTTECH |
| Title | PNP Transistor |
| Description | Plastic-Encapsulate Transistors FEATURES • High breakdown voltage and high current. BVCEO=-80V,IC=-1A • Good hFEVLinearity. • Low VCE(sat). • Complements the 2SD1898. 2SB1260(PNP) Marking: ZL Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Co. |
| Features |
• High breakdown voltage and high current. BVCEO=-80V,IC=-1A • Good hFEVLinearity. • Low VCE(sat). • Complements the 2SD1898. 2SB1260(PNP) Marking: ZL Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO. |
2SB1260 |
| Part Number | 2SB1260 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon PNP transistor |
| Description | SOT-89 PNP 。Silicon PNP transistor in a SOT-89 Plastic Package. / Features ，，， 2SD1898 。 High breakdown voltage, good hFE linearity, low VCE(sat), complements the 2SD1898. / Applications 。 General power amplifier applications. / Equivalent Circuit / Pinning 1 2 3 PIN1：Base PIN 2：. |
| Features | ，，， 2SD1898 。 High breakdown voltage, good hFE linearity, low VCE(sat), complements the 2SD1898. / Applications 。 General power amplifier applications. / Equivalent Circuit / Pinning 1 2 3 PIN1：Base PIN 2：Collector / Marking hFE Classifications Symbol hFE Range Marking P 82～180 HBHP PIN 3：Emitter Q 120～270 HBHQ R 180～390 HBHR ** ** ** http://www.fsbrec.com 1/6 2SB1260 Rev.E . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1260 |
UTC |
POWER TRANSISTOR |
|
| 2 | 2SB1260-HF |
Kexin |
PNP Transistors |
|
| 3 | 2SB1261 |
LGE |
PNP Transistor |
|
| 4 | 2SB1261 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 5 | 2SB1261 |
GME |
PNP Epitaxial Planar Silicon Transistors |
|
| 6 | 2SB1261 |
JCET |
PNP Transistor |
|
| 7 | 2SB1261 |
JILIN SINO |
PNP Epitaxial Silicon Transistor |
|
| 8 | 2SB1261-K |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 9 | 2SB1261-Z |
NEC |
PNP SILICON EPITAXIAL TRANSISTOR |
|
| 10 | 2SB1261-Z |
TRANSYS Electronics Limited |
Plastic-Encapsulate Transistors |
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Desde 2024. D4U Semiconductor.
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