Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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2SB1261 |
| Part Number | 2SB1261 |
| Manufacturer | GME |
| Title | PNP Epitaxial Planar Silicon Transistors |
| Description | PNP Epitaxial Planar Silicon Transistors FEATURES z High hFE hFE=100 to 400. z Low VCE(sat0 VCE(sat)≤0.3V. Pb Lead-free Production specification 2SB1261 ORDERING INFORMATION Type No. Marking 2SB1261 1261 SOT-89 Package Code SOT-89 MAXIMUM RATING operating temperature range applies unless o. |
| Features | z High hFE hFE=100 to 400. z Low VCE(sat0 VCE(sat)≤0.3V. Pb Lead-free Production specification 2SB1261 ORDERING INFORMATION Type No. Marking 2SB1261 1261 SOT-89 Package Code SOT-89 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage -60 V VCEO VEBO IC ICP IB PC Collector-Emitter Voltage Emitter-Base. |
2SB1261 |
| Part Number | 2SB1261 |
| Manufacturer | LGE |
| Title | PNP Transistor |
| Description | 2SB1261 Transistor(PNP) 1. BASE 1 2. COLLECTOR 3. EMITTER TO-252-2L Features High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) ≤0.3V MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -60 VEBO Emitter-B. |
| Features | High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) ≤0.3V MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -60 VEBO Emitter-Base Voltage -7 IC Collector Current -Continuous -3 PD Collector Power Dissipation 2 TJ Junction Temperature 150 Tstg Storage Temperature -55-150 Units V V V A W ℃ ℃ Dime. |
2SB1261 |
| Part Number | 2SB1261 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon PNP transistor |
| Description | TO-252 PNP 。Silicon PNP transistor in a TO-252 Plastic Package. / Features hFE ，，。 Excellent hFE linearity, low VCE(sat), high PC. / Applications 、，。 Audio frequency amplifier and switching, especially in hybrid integrated circuits applications. / Equivalent Circuit / Pinning 12 3 4. |
| Features | hFE ，，。 Excellent hFE linearity, low VCE(sat), high PC. / Applications 、，。 Audio frequency amplifier and switching, especially in hybrid integrated circuits applications. / Equivalent Circuit / Pinning 12 3 4 PIN1：Base PIN 2,4：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range M 100～200 L 160～320 K 200～400 http://www.fsbrec.com 1/6 2S. |
2SB1261 |
| Part Number | 2SB1261 |
| Manufacturer | JCET |
| Title | PNP Transistor |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SB1261 TRANSISTOR (PNP) TO – 252 FEATURES z Low VCE(sat) z High DC Current Gain MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage C. |
| Features | z Low VCE(sat) z High DC Current Gain MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -60 -60 -7 -3 1 125 150 -55~+150 1. BASE 2. COLLECT. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1260 |
Rohm |
Power Transistor |
|
| 2 | 2SB1260 |
GME |
Power Transistor |
|
| 3 | 2SB1260 |
HOTTECH |
PNP Transistor |
|
| 4 | 2SB1260 |
WILLAS |
Plastic-Encapsulate Transistors |
|
| 5 | 2SB1260 |
JinYu |
PNP Transistor |
|
| 6 | 2SB1260 |
Kexin |
PNP Transistors |
|
| 7 | 2SB1260 |
JCET |
PNP Transistor |
|
| 8 | 2SB1260 |
SeCoS |
PNP Plastic Encapsulated Transistor |
|
| 9 | 2SB1260 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 10 | 2SB1260 |
Weitron Technology |
PNP Plastic-Encapsulate Transistor |
|
Desde 2024. D4U Semiconductor.
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