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2SB1260 |
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| Part Number | 2SB1260 |
| Manufacturer | HOTTECH |
| Description | Plastic-Encapsulate Transistors FEATURES • High breakdown voltage and high current. BVCEO=-80V,IC=-1A • Good hFEVLinearity. • Low VCE(sat). • Complements the 2SD1898. 2SB1260(PNP) Marking: ZL Maxim... |
| Features |
• High breakdown voltage and high current. BVCEO=-80V,IC=-1A • Good hFEVLinearity. • Low VCE(sat). • Complements the 2SD1898. 2SB1260(PNP) Marking: ZL Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO -80 VCEO -80 VEBO -5 IC 1 PC 500 TJ 150 Tstg -55to +150 Unit V V V A mW 1. BASE 2. COLLECTO 3. EMITTER SOT-89 ELECTRICAL CHARACTERISTICS ( @ Ta=25 Parameter Symbol Collector-base brea... |
| Document |
 2SB1260 Data Sheet
PDF 167.00KB |
Desde 2024. D4U Semiconductor.
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