Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SB709A |
| Part Number | 2SB709A |
| Manufacturer | Kexin |
| Title | PNP Transistors |
| Description | SMD Type TransistIoCrs Silicon PNP Epitaxial Planar Type 2SB709A Features High forward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 1. |
| Features | High forward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter . |
2SB709A |
| Part Number | 2SB709A |
| Manufacturer | Galaxy Semi-Conductor Holdings Limited |
| Title | Silicon Epitaxial Planar Transistor |
| Description | BL Galaxy Electrical www.DataSheet4U.com Production specification Silicon Epitaxial Planar Transistor High forward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2SB709A FEATURES z z . |
| Features | z z Pb Lead-free APPLICATIONS z For general amplification complementary to 2SD601A SOT-23 ORDERING INFORMATION Type No. 2SB709A Marking BQ1,BR1,BS1 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction. |
2SB709A |
| Part Number | 2SB709A |
| Manufacturer | SeCoS |
| Title | PNP Silicon General Purpose Transistor |
| Description | Elektronische Bauelemente 2SB709A -0.2A , -45V PNP Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES For general amplification Complementary of the 2SD601A CLASSIFICATION OF hFE Product-Rank 2SB709A-Q Range 160~260 Marking BQ1. |
| Features | For general amplification Complementary of the 2SD601A CLASSIFICATION OF hFE Product-Rank 2SB709A-Q Range 160~260 Marking BQ1 2SB709A-R 210~340 BR1 2SB709A-S 290~460 BS1 PACKAGE INFORMATION Package MPQ SOT-23 3K LeaderSize 7’ inch SOT-23 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 RE. |
2SB709A |
| Part Number | 2SB709A |
| Manufacturer | GME |
| Title | Silicon Epitaxial Planar Transistor |
| Description | Production specification Silicon Epitaxial Planar Transistor FEATURES High forward current transfer ratio hFE. Mini type package, allowing downsizing Pb Lead-free of the equipment and automatic insertion through the tape packing and the magazine packing. 2SB709A APPLICATIONS For genera. |
| Features |
High forward current transfer ratio hFE. Mini type package, allowing downsizing Pb Lead-free of the equipment and automatic insertion through the tape packing and the magazine packing. 2SB709A APPLICATIONS For general amplification complementary to 2SD601A. ORDERING INFORMATION Type No. Marking 2SB709A BQ1/BR1/BS1 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwi. |
2SB709A |
| Part Number | 2SB709A |
| Manufacturer | LZG |
| Title | SILICON PNP TRANSISTOR |
| Description | 2SB709A(3CG709A) PNP /SILICON PNP TRANSISTOR :/Purpose: General power amplifier applications. : 2SD601A(3DG601A)/Features:Complementary pair with 2SD601A(3DG601A). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -45 V VCEO -45 V VEBO -7.0 V IC -100 mA ICP -200 mA P. |
| Features | Complementary pair with 2SD601A(3DG601A). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -45 V VCEO -45 V VEBO -7.0 V IC -100 mA ICP -200 mA PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Test condition IC=-10μA IE=0 IC=-2mA IB=0 IE=-10μA IC=0 VCB=-20V IE=0 VCE=-10V IB=0 VC. |
2SB709A |
| Part Number | 2SB709A |
| Manufacturer | TRANSYS |
| Title | Plastic-Encapsulated Transistors |
| Description | Transys Electronics L I M I T E D www.DataSheet4U.com SOT-23 Plastic-Encapsulated Transistors SOT-23 1. BASE 2. EMITTER 2SB709A FEATURES Power dissipation PCM: TRANSISTOR (PNP) 3. COLLECTOR 0.2 W (Tamb=25℃) 0. 95 1. 0 2. 4 1. 3 Collector current -0.2 A ICM: Collector-base voltage -45 V V(B. |
| Features | Power dissipation PCM: TRANSISTOR (PNP) 3. COLLECTOR 0.2 W (Tamb=25℃) 0. 95 1. 0 2. 4 1. 3 Collector current -0.2 A ICM: Collector-base voltage -45 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 2. 9 1. 9 0. 95 Unit: mm ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base b. |
2SB709A |
| Part Number | 2SB709A |
| Manufacturer | Rectron |
| Title | BIPOLAR PNP TRANSISTOR |
| Description | RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) FEATURES * Power dissipation PCM : 0.2 W(Tamb=25OC) 2SB709A MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: A. |
| Features | * Power dissipation PCM : 0.2 W(Tamb=25OC) 2SB709A MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. Fo. |
2SB709A |
| Part Number | 2SB709A |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon PNP transistor |
| Description | SOT-23 PNP 。Silicon PNP transistor in a SOT-23 Plastic Package. / Features 2SD601A 。 Complementary pair with 2SD601A. / Applications 。 General power amplifier applications. / Equivalent Circuit / Pinning 3 2 1 PIN1：Emitter PIN 2：Base PIN 3：Collector / hFE Classifications & Mark. |
| Features | 2SD601A 。 Complementary pair with 2SD601A. / Applications 。 General power amplifier applications. / Equivalent Circuit / Pinning 3 2 1 PIN1：Emitter PIN 2：Base PIN 3：Collector / hFE Classifications & Marking hFE Classifications Symbol hFE Range Q 160~260 R 210~340 Marking H1BQ H1BR S 290~460 H1BS http://www.fsbrec.com 1/6 2SB709A Rev.E Mar.-2016 / Absolute Maximum Ratings. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB709A-HF |
Kexin |
PNP Transistors |
|
| 2 | 2SB703 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SB703 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SB705 |
INCHANGE |
PNP Transistor |
|
| 5 | 2SB705 |
SavantIC |
Silicon PNP Power Transistors |
|
| 6 | 2SB705A |
SavantIC |
Silicon PNP Power Transistors |
|
| 7 | 2SB705A |
Inchange Semiconductor |
Power Transistor |
|
| 8 | 2SB705B |
SavantIC |
Silicon PNP Power Transistors |
|
| 9 | 2SB705B |
INCHANGE |
PNP Transistor |
|
| 10 | 2SB706 |
ETC |
PNP/NPN SILICON TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|