Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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2SB1198K |
| Part Number | 2SB1198K |
| Manufacturer | Kexin |
| Title | PNP Transistors |
| Description | SMD Type Transistors PNP Transistors 2SB1198K ■ Features ● Collector Current Capability IC=-0.5A ● Collector Emitter Voltage VCEO=-80V ● Complementary to 2SD1782K +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.0. |
| Features |
● Collector Current Capability IC=-0.5A ● Collector Emitter Voltage VCEO=-80V ● Complementary to 2SD1782K +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 +0.21.1 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - C. |
2SB1198K |
| Part Number | 2SB1198K |
| Manufacturer | Rohm |
| Title | Low-frequency Transistor |
| Description | Transistors Low-frequency Transistor (*80V, *0.5A) 2SB1198K FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 3) Complements the 2SD1782K. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Unit:s mm) FAb. |
| Features | 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 3) Complements the 2SD1782K. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Unit:s mm) FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C) (96-136-B93) 229 Transistors FPackaging specifications and hFE hFE values are classified as . |
2SB1198K |
| Part Number | 2SB1198K |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon PNP transistor |
| Description | SOT-23 PNP 。Silicon PNP transistor in a SOT-23 Plastic Package. / Features ，, 2SD1782K 。 High breakdown, low VCE(sat),complements the 2SD1782K. / Applications 。 Medium power amplifier applications. / Equivalent Circuit / Pinning 3 2 1 PIN1：Emitter PIN 2：Base PIN 3：Collector / hFE . |
| Features | ，, 2SD1782K 。 High breakdown, low VCE(sat),complements the 2SD1782K. / Applications 。 Medium power amplifier applications. / Equivalent Circuit / Pinning 3 2 1 PIN1：Emitter PIN 2：Base PIN 3：Collector / hFE Classifications & Marking hFE Classifications Symbol hFE Range Q 120~270 R 180~390 Marking HAKQ HAKR http://www.fsbrec.com 1/6 2SB1198K Rev.E Mar.-2016 / Absolute Maximum . |
2SB1198K |
| Part Number | 2SB1198K |
| Manufacturer | DXC |
| Title | PNP Transistor |
| Description | 2SB1198K SOT-23-3L Transistor(PNP) 1. BASE 2. EMITTER 3. COLLECTOR Features Low VCE(sat): VCE(sat)=-0.2V(Typ.)(IC=-0.5A,IB=-50mA) High breakdown voltage BVCEO=-80V Complements the 2SD1782K MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collec. |
| Features | Low VCE(sat): VCE(sat)=-0.2V(Typ.)(IC=-0.5A,IB=-50mA) High breakdown voltage BVCEO=-80V Complements the 2SD1782K MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -80 -80 . |
2SB1198K |
| Part Number | 2SB1198K |
| Manufacturer | LZG |
| Title | SILICON PNP TRANSISTOR |
| Description | 2SB1198K(3CG1198K) PNP /SILICON PNP TRANSISTOR ：。 Purpose: Medium power amplifier applications. :，, 2SD1782K(3DG1782K)。 Features: High breakdown,low VCE(sat),complements the 2SD1782K(3DG1782K). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -80 V VCEO -80 V VEBO -5 V IC . |
| Features | High breakdown,low VCE(sat),complements the 2SD1782K(3DG1782K). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -80 V VCEO -80 V VEBO -5 V IC -500 mA PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) fT Cob IC=-50μA IC=-2mA IE=-50μA VCB=-50V VEB=-4V VCE=-3V IC=-500mA VCE=-10V IE=50m. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1198 |
Rohm |
Low-frequency Transistor |
|
| 2 | 2SB1198 |
UTC |
LOW FREQUENCY PNP TRANSISTOR |
|
| 3 | 2SB1198KFRA |
ROHM |
Power Transistor |
|
| 4 | 2SB1190 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SB1190 |
INCHANGE |
PNP Transistor |
|
| 6 | 2SB1192 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SB1192 |
INCHANGE |
PNP Transistor |
|
| 8 | 2SB1193 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SB1193 |
Panasonic |
Silicon PNP Transistor |
|
| 10 | 2SB1193 |
INCHANGE |
PNP Transistor |
|
Desde 2024. D4U Semiconductor.
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