Distributor | Stock | Price | Buy |
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2SB1190 |
Part Number | 2SB1190 |
Manufacturer | INCHANGE |
Title | PNP Transistor |
Description | ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Complement to Type 2SD1770 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·TV vertical deflection output applications. ABSOLUT. |
Features | tage IC= -5mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -0.5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA VBE(on) Base-Emitter On Voltage IC= -0.3A; VCE= -10V ICBO Collector Cutoff Current VCB= -200V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE-1 DC Current Gain IC= -0.1A; VCE= -10V hFE-2 DC Current Gain IC= -0.3A; VCE= -10V hFE. |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SB1192 |
SavantIC |
SILICON POWER TRANSISTOR | |
2 | 2SB1192 |
INCHANGE |
PNP Transistor | |
3 | 2SB1193 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SB1193 |
Panasonic |
Silicon PNP Transistor | |
5 | 2SB1193 |
INCHANGE |
PNP Transistor | |
6 | 2SB1194 |
SavantIC |
SILICON POWER TRANSISTOR | |
7 | 2SB1194 |
INCHANGE |
PNP Transistor | |
8 | 2SB1197 |
WEITRON |
PNP Transistor | |
9 | 2SB1197 |
GME |
Silicon Epitaxial Planar Transistor | |
10 | 2SB1197 |
MCC |
PNP Transistor |