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2SB1197 PNP Transistor

2SB1197


2SB1197
Part Number 2SB1197
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2SB1197

MCC
2SB1197
Part Number 2SB1197
Manufacturer MCC
Title PNP Transistor
Description www.DataSheet4U.com MCC Micro Commercial Components TM   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1197 2SB1197-P 2SB1197-Q 2SB1197-R PNP Silicon Epitaxial Transistors • • • Features Small Package Mounting:any position .
Features Small Package Mounting:any position ROHS Compliant x Case Material: Molded Plastic. Classification Rating 94V-0 UL Flammability SOT-23 Maximum Ratings @ Ta = 25ć(unless otherwise noted) A Symbol IC PD TJ TSTG Parameter Collector Current Total Device Dissipation Junction Temperature Storage Temperature Range Value -0.8 0.2 150 -55 to +150 Unit A W к к F E D C C B B E Electrical Chara.

2SB1197

Galaxy Semi-Conductor
2SB1197
Part Number 2SB1197
Manufacturer Galaxy Semi-Conductor
Title Silicon Epitaxial Planar Transistor
Description BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z z z z z Small surface mounting type. Corredtor peak current(Max.=1000mA) Suitable for high packing density. Low voltage(Max.=40v) High saturation current capability. Voltage controlled small signal switch. Production specificatio.
Features z z z z z z Small surface mounting type. Corredtor peak current(Max.=1000mA) Suitable for high packing density. Low voltage(Max.=40v) High saturation current capability. Voltage controlled small signal switch. Production specification 2SB1197 Pb Lead-free APPLICATIONS z z Telephone and professional communication equipment. Other switching appilications. SOT-23 ORDERING INFORMATION Type No. 2.

2SB1197

Jin Yu Semiconductor
2SB1197
Part Number 2SB1197
Manufacturer Jin Yu Semiconductor
Title TRANSISTOR
Description 2SB1 1 97 TRANSISTOR(PNP) SOT-23 Unit : mm 1. BASE FEATURES z Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) z IC =-0.8A. Complements the 2SD1781. z MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage.
Features z Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) z IC =-0.8A. Complements the 2SD1781. z MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -40 -32 -5 -0.8 200 150 -55-150 Unit.

2SB1197

Kexin
2SB1197
Part Number 2SB1197
Manufacturer Kexin
Title PNP Transistors
Description SMD Type SMD Type PNP Transistors 2SB1197 (2SB1197K) Transistors Features Low VCE(sat).VCE(sat) -0.5V IC / IB= -0.5A / -50mA . IC = -0.8A. PNP silicon transistor +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.
Features Low VCE(sat).VCE(sat) -0.5V IC / IB= -0.5A / -50mA . IC = -0.8A. PNP silicon transistor +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Base 2.Emitter 3.collector 0-0.1 +0.10.38 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base Voltage Collector-emitter Voltage Emitter-base Voltag.

2SB1197

WEITRON
2SB1197
Part Number 2SB1197
Manufacturer WEITRON
Title PNP Transistor
Description 2SB1197 PNP General Purpose Transistors P b Lead(Pb)-Free Features: * High current capacity in compact package. * Epitaxial planar type. * We declare that the material of product compliance with RoHS requirements. 1 2 3 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Collector-Base Voltage Collector-Emi.
Features * High current capacity in compact package. * Epitaxial planar type. * We declare that the material of product compliance with RoHS requirements. 1 2 3 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation TA=25°C Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD .

2SB1197

GME
2SB1197
Part Number 2SB1197
Manufacturer GME
Title Silicon Epitaxial Planar Transistor
Description Production specification Silicon Epitaxial Planar Transistor FEATURES z Small surface mounting type. z Corredtor peak current(Max.=1000mA). Pb Lead-free z Suitable for high packing density. z Low voltage(Max.=40v). z High saturation current capability. z Voltage controlled small signal switch.
Features z Small surface mounting type. z Corredtor peak current(Max.=1000mA). Pb Lead-free z Suitable for high packing density. z Low voltage(Max.=40v). z High saturation current capability. z Voltage controlled small signal switch. APPLICATIONS z Telephone and professional communication equipment. z Other switching appilications. ORDERING INFORMATION Type No. Marking 2SB1197 AHP/AHQ/AHR 2SB1.

2SB1197

JCET
2SB1197
Part Number 2SB1197
Manufacturer JCET
Title PNP Transistor
Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB1197 TRANSISTOR (PNP) FEATURES z Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) z IC =-0.8A. z Complements the 2SD1781. SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Unit : mm MAXIMUM RATINGS (Ta=25℃ unle.
Features z Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) z IC =-0.8A. z Complements the 2SD1781. SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Unit : mm MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage.

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