Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SB1119 |
| Part Number | 2SB1119 |
| Manufacturer | Sanyo Semicon Device |
| Title | PNP Transistor |
| Description | Ordering number:1785A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1119/2SD1619 LF Amplifier, Electronic Governor Applications Features · Very small size making it easy to provide highdensity, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1119/2SD1619] ( ) : 2SB1119 Specificat. |
| Features |
· Very small size making it easy to provide highdensity, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1119/2SD1619] ( ) : 2SB1119 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junctio. |
2SB1119 |
| Part Number | 2SB1119 |
| Manufacturer | TY Semiconductor |
| Title | Transistor |
| Description | Product specification 2SB1119 Features Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipatio. |
| Features | Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -25 -25 -5 -1 -2 500 150 -55 to +150 Unit V V V A A. |
2SB1119 |
| Part Number | 2SB1119 |
| Manufacturer | HOTTECH |
| Title | GENERAL PURPOSE TRANSISTOR |
| Description | REPLACEMENT TYPE :2SB1119 FEATURES Low Collector-Emitter Saturation Voltage VCE(sat) Satisfactory Operation Performances at High Efficiency with the Low Voltage Power Supply. MAXIMUMRATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO -25 Collecto. |
| Features |
Low Collector-Emitter Saturation Voltage VCE(sat) Satisfactory Operation Performances at High Efficiency with the Low Voltage Power Supply. MAXIMUMRATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO -25 Collector-Emitter Voltage VCEO -25 Emitter-Base Voltage VEBO -5 Collector Current-Continuous IC -1 Collector Power Dissipation PT 500 . |
2SB1119 |
| Part Number | 2SB1119 |
| Manufacturer | SeCoS |
| Title | PNP Silicon Medium Power Transistor |
| Description | 2SB1119/2SD1619 Elektronische Bauelemente RoHS Compliant Product D D1 A PNP Silicon Medium Power Transistor SOT-89 E1 FEATURES b1 Power dissipation P CM : 500mW˄Tamb=25ć˅ 1.BASE Collector current 2.COLLECTOR A ICM : -1 3.EMITTER Collector-base voltage V VB(BR)CBO : -25 Operating and. |
| Features | b1 Power dissipation P CM : 500mW˄Tamb=25ć˅ 1.BASE Collector current 2.COLLECTOR A ICM : -1 3.EMITTER Collector-base voltage V VB(BR)CBO : -25 Operating and storage junction temperature range TJˈTstg: -55ć to +150ć b L E e e1 C Dimensions In Millimeters Symbol A b b1 c D D1 E E1 e e1 L 2.900 0.900 Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 1.500TYP 3.100 1.100 Max 1.600. |
2SB1119 |
| Part Number | 2SB1119 |
| Manufacturer | Jin Yu Semiconductor |
| Title | Transistor |
| Description | 2SB1 1 1 9 TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES z Small Flat Package z LF Amplifier, Electronic Governor Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Col. |
| Features | z Small Flat Package z LF Amplifier, Electronic Governor Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -25 -25 -5 -1 500 250 15. |
2SB1119 |
| Part Number | 2SB1119 |
| Manufacturer | TRANSYS |
| Title | Plastic-Encapsulated Transistors |
| Description | Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SB1119 FEATURES Power dissipation PCM: 500 mW (Tamb=25℃) 2. COLLECTOR 3. EMITTER 1 2 3 TRANSISTOR (PNP) SOT-89 1. BASE Collector current -1 A ICM: Collector current (Pulse) ICP: -2 A Collector-base voltage -25 V V(BR)CBO: . |
| Features | Power dissipation PCM: 500 mW (Tamb=25℃) 2. COLLECTOR 3. EMITTER 1 2 3 TRANSISTOR (PNP) SOT-89 1. BASE Collector current -1 A ICM: Collector current (Pulse) ICP: -2 A Collector-base voltage -25 V V(BR)CBO: Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-e. |
2SB1119 |
| Part Number | 2SB1119 |
| Manufacturer | Kexin |
| Title | Transistor |
| Description | SMD Type Transistors PNP Epitaxial Planar Silicon Transistors 2SB1119 Features Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collec. |
| Features | Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -25 -25 -5 -1 -2 500 150 -55 to +150 Unit V V V A A. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1110 |
Hitachi Semiconductor |
PNP Transistor |
|
| 2 | 2SB1114 |
NEC |
PNP Transistor |
|
| 3 | 2SB1114 |
Kexin |
Transistor |
|
| 4 | 2SB1115 |
NEC |
PNP Transistor |
|
| 5 | 2SB1115 |
Kexin |
Transistor |
|
| 6 | 2SB1115 |
Renesas |
PNP SILICON EPITAXIAL TRANSISTOR |
|
| 7 | 2SB1115A |
NEC |
PNP Transistor |
|
| 8 | 2SB1115A |
Kexin |
Transistor |
|
| 9 | 2SB1116 |
NEC |
PNP SILICON TRANSISTORS |
|
| 10 | 2SB1116 |
UTC |
PNP EPITAXIAL SILICON TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|