Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SB1116 |
| Part Number | 2SB1116 |
| Manufacturer | UTC |
| Title | PNP EPITAXIAL SILICON TRANSISTOR |
| Description | Complement to UTC 2SD1616/A ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SB1116L-x-AB3-B 2SB1116G-x-AB3-B SOT-89 2SB1116L-x-T92-B 2SB1116G-x-T92-B TO-92 2SB1116L-x-T92-K 2SB1116G-x-T92-K TO-92 2SB1116AL-x-AB3-B 2SB1116AG-x-AB3-B SOT-89 2SB1116AL-x-T92-B 2. |
| Features | ES CO., LTD www.unisonic.com.tw 2 of 5 QW-R201-066.G 2SB1116/A PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage 2SB1116 2SB1116A VCBO -60 -80 V Collector to Emitter Voltage 2SB1116 2SB1116A VCEO -50 -60 V Emitter to Base Voltage VEBO -6 V Collector Current DC IC Pulse(Note2) IC. |
2SB1116 |
| Part Number | 2SB1116 |
| Manufacturer | SeCoS |
| Title | PNP Plastic Encapsulated Transistor |
| Description | Elektronische Bauelemente 2SB1116 -1 A, -60 V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High Collector Power Dissipation Complementary to 2SD1616 CLASSIFICATION OF hFE(1) Product-Rank 2SB1116-L 2SB1116-K Range 135~270 20. |
| Features | High Collector Power Dissipation Complementary to 2SD1616 CLASSIFICATION OF hFE(1) Product-Rank 2SB1116-L 2SB1116-K Range 135~270 200~400 2SB1116-U 300~600 TO-92 GH J AD B K E CF 1Emitter 2Collector 3Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA =. |
2SB1116 |
| Part Number | 2SB1116 |
| Manufacturer | NEC |
| Title | PNP SILICON TRANSISTORS |
| Description | of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full r. |
| Features |
• Low VCE(sat) VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA) • High PT in small dimension with general-purpose PT = 0.75 W, VCEO = −50/−60 V, IC(DC) = −1.0 A • Complementary transistor with 2SD1616 and 1616A ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total powe. |
2SB1116 |
| Part Number | 2SB1116 |
| Manufacturer | Weitron |
| Title | PNP General Purpose Transistor |
| Description | 2SB1116/2SB1116A PNP General Purpose Transistor P b Lead(Pb)-Free 3 BASE COLLECTOR 2 1 2 1 EMITTER 3 TO-92 Maximum Ratings ( TA=25℃ C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Symbol VCBO VCEO VEBO lC 1116 -6. |
| Features | CTERISTICS (TA=25℃ C unless otherwise noted) (Countinued) Characteristics Symbol Min OFF CHARACTERISTICS VCB=-60V, lE=0 VCB=-80V, lE=0 VEB=-6V, lC=0 1116 1116A lCBO lEBO -0.1 -0.1 µA Max Unit µA ELECTRICAL CHARACTERISTICS (TA=25℃ C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ ON CHARACTERISTICS DC current gain VCE=-2V, lc=-0.1A VCE=-2V, lc=-1A Collector emitter saturatio. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1110 |
Hitachi Semiconductor |
PNP Transistor |
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| 2 | 2SB1114 |
NEC |
PNP Transistor |
|
| 3 | 2SB1114 |
Kexin |
Transistor |
|
| 4 | 2SB1115 |
NEC |
PNP Transistor |
|
| 5 | 2SB1115 |
Kexin |
Transistor |
|
| 6 | 2SB1115 |
Renesas |
PNP SILICON EPITAXIAL TRANSISTOR |
|
| 7 | 2SB1115A |
NEC |
PNP Transistor |
|
| 8 | 2SB1115A |
Kexin |
Transistor |
|
| 9 | 2SB1116A |
NEC |
PNP SILICON TRANSISTORS |
|
| 10 | 2SB1116A |
UTC |
PNP EPITAXIAL SILICON TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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