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2SB1116A PNP Plastic Encapsulated Transistor

2SB1116A


2SB1116A
Part Number 2SB1116A
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2SB1116A

NEC
2SB1116A
Part Number 2SB1116A
Manufacturer NEC
Title PNP SILICON TRANSISTORS
Description of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full r.
Features
• Low VCE(sat) VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA)
• High PT in small dimension with general-purpose PT = 0.75 W, VCEO = −50/−60 V, IC(DC) = −1.0 A
• Complementary transistor with 2SD1616 and 1616A ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total powe.

2SB1116A

UTC
2SB1116A
Part Number 2SB1116A
Manufacturer UTC
Title PNP EPITAXIAL SILICON TRANSISTOR
Description Complement to UTC 2SD1616/A  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SB1116L-x-AB3-B 2SB1116G-x-AB3-B SOT-89 2SB1116L-x-T92-B 2SB1116G-x-T92-B TO-92 2SB1116L-x-T92-K 2SB1116G-x-T92-K TO-92 2SB1116AL-x-AB3-B 2SB1116AG-x-AB3-B SOT-89 2SB1116AL-x-T92-B 2.
Features ES CO., LTD www.unisonic.com.tw 2 of 5 QW-R201-066.G 2SB1116/A PNP SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage 2SB1116 2SB1116A VCBO -60 -80 V Collector to Emitter Voltage 2SB1116 2SB1116A VCEO -50 -60 V Emitter to Base Voltage VEBO -6 V Collector Current DC IC Pulse(Note2) IC.

2SB1116A

Weitron
2SB1116A
Part Number 2SB1116A
Manufacturer Weitron
Title PNP General Purpose Transistor
Description 2SB1116/2SB1116A PNP General Purpose Transistor P b Lead(Pb)-Free 3 BASE COLLECTOR 2 1 2 1 EMITTER 3 TO-92 Maximum Ratings ( TA=25℃ C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Symbol VCBO VCEO VEBO lC 1116 -6.
Features CTERISTICS (TA=25℃ C unless otherwise noted) (Countinued) Characteristics Symbol Min OFF CHARACTERISTICS VCB=-60V, lE=0 VCB=-80V, lE=0 VEB=-6V, lC=0 1116 1116A lCBO lEBO -0.1 -0.1 µA Max Unit µA ELECTRICAL CHARACTERISTICS (TA=25℃ C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ ON CHARACTERISTICS DC current gain VCE=-2V, lc=-0.1A VCE=-2V, lc=-1A Collector emitter saturatio.

2SB1116A

JCST
2SB1116A
Part Number 2SB1116A
Manufacturer JCST
Title PNP Transistor
Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SB1116/1116A TRANSISTOR (PNP) TO-92 FEATURES · High Collector Power Dissipation . · Complementary to 2SD1616/2SD1616A 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. BASE Symbo.
Features
· High Collector Power Dissipation .
· Complementary to 2SD1616/2SD1616A 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. BASE Symbol Parameter Value Unit VCBO Collector-Base Voltage 2SB1116 2SB1116A -60 -80 V VCEO Collector-Emitter Voltage 2SB1116 2SB1116A -50 -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -1 A PC Collector Pow.

2SB1116A

USHA
2SB1116A
Part Number 2SB1116A
Manufacturer USHA
Title Transistor
Description Transistors 2SB1116A .
Features .

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