Distributor | Stock | Price | Buy |
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2SB1116A |
Part Number | 2SB1116A |
Manufacturer | NEC |
Title | PNP SILICON TRANSISTORS |
Description | of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full r. |
Features |
• Low VCE(sat) VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA) • High PT in small dimension with general-purpose PT = 0.75 W, VCEO = −50/−60 V, IC(DC) = −1.0 A • Complementary transistor with 2SD1616 and 1616A ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total powe. |
2SB1116A |
Part Number | 2SB1116A |
Manufacturer | UTC |
Title | PNP EPITAXIAL SILICON TRANSISTOR |
Description | Complement to UTC 2SD1616/A ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SB1116L-x-AB3-B 2SB1116G-x-AB3-B SOT-89 2SB1116L-x-T92-B 2SB1116G-x-T92-B TO-92 2SB1116L-x-T92-K 2SB1116G-x-T92-K TO-92 2SB1116AL-x-AB3-B 2SB1116AG-x-AB3-B SOT-89 2SB1116AL-x-T92-B 2. |
Features | ES CO., LTD www.unisonic.com.tw 2 of 5 QW-R201-066.G 2SB1116/A PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage 2SB1116 2SB1116A VCBO -60 -80 V Collector to Emitter Voltage 2SB1116 2SB1116A VCEO -50 -60 V Emitter to Base Voltage VEBO -6 V Collector Current DC IC Pulse(Note2) IC. |
2SB1116A |
Part Number | 2SB1116A |
Manufacturer | Weitron |
Title | PNP General Purpose Transistor |
Description | 2SB1116/2SB1116A PNP General Purpose Transistor P b Lead(Pb)-Free 3 BASE COLLECTOR 2 1 2 1 EMITTER 3 TO-92 Maximum Ratings ( TA=25℃ C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Symbol VCBO VCEO VEBO lC 1116 -6. |
Features | CTERISTICS (TA=25℃ C unless otherwise noted) (Countinued) Characteristics Symbol Min OFF CHARACTERISTICS VCB=-60V, lE=0 VCB=-80V, lE=0 VEB=-6V, lC=0 1116 1116A lCBO lEBO -0.1 -0.1 µA Max Unit µA ELECTRICAL CHARACTERISTICS (TA=25℃ C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ ON CHARACTERISTICS DC current gain VCE=-2V, lc=-0.1A VCE=-2V, lc=-1A Collector emitter saturatio. |
2SB1116A |
Part Number | 2SB1116A |
Manufacturer | JCST |
Title | PNP Transistor |
Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SB1116/1116A TRANSISTOR (PNP) TO-92 FEATURES · High Collector Power Dissipation . · Complementary to 2SD1616/2SD1616A 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. BASE Symbo. |
Features |
· High Collector Power Dissipation . · Complementary to 2SD1616/2SD1616A 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. BASE Symbol Parameter Value Unit VCBO Collector-Base Voltage 2SB1116 2SB1116A -60 -80 V VCEO Collector-Emitter Voltage 2SB1116 2SB1116A -50 -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -1 A PC Collector Pow. |
2SB1116A |
Part Number | 2SB1116A |
Manufacturer | USHA |
Title | Transistor |
Description | Transistors 2SB1116A . |
Features | . |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SB1116 |
NEC |
PNP SILICON TRANSISTORS | |
2 | 2SB1116 |
UTC |
PNP EPITAXIAL SILICON TRANSISTOR | |
3 | 2SB1116 |
Weitron |
PNP General Purpose Transistor | |
4 | 2SB1116 |
JCST |
PNP Transistor | |
5 | 2SB1116 |
SeCoS |
PNP Plastic Encapsulated Transistor | |
6 | 2SB1110 |
Hitachi Semiconductor |
PNP Transistor | |
7 | 2SB1114 |
NEC |
PNP Transistor | |
8 | 2SB1114 |
Kexin |
Transistor | |
9 | 2SB1115 |
NEC |
PNP Transistor | |
10 | 2SB1115 |
Kexin |
Transistor |