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2SB1116A |
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| Part Number | 2SB1116A |
| Manufacturer | NEC |
| Description | of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these cir... |
| Features |
• Low VCE(sat) VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA) • High PT in small dimension with general-purpose PT = 0.75 W, VCEO = −50/−60 V, IC(DC) = −1.0 A • Complementary transistor with 2SD1616 and 1616A ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* PT Tj Tstg Ratings 2SB1116 2SB1116A −60 −80 −50 −60 −6.0 −1.0 −2.0 0.75 150 −55 to +150 * PW ≤ 10 ms, ... |
| Document |
 2SB1116A Data Sheet
PDF 100.93KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1116 |
NEC |
PNP SILICON TRANSISTORS |
|
| 2 | 2SB1116 |
UTC |
PNP EPITAXIAL SILICON TRANSISTOR |
|
| 3 | 2SB1116 |
Weitron |
PNP General Purpose Transistor |
|
| 4 | 2SB1116 |
JCST |
PNP Transistor |
|
| 5 | 2SB1116 |
SeCoS |
PNP Plastic Encapsulated Transistor |
|
| 6 | 2SB1116A |
UTC |
PNP EPITAXIAL SILICON TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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