2SB1116A |
Part Number | 2SB1116A |
Manufacturer | SeCoS |
Description | 2SB1116A Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free -1 A, -80 V PNP Plastic Encapsulated Transistor FEATURES High Collector Power Dissipation Com... |
Features |
High Collector Power Dissipation Complementary to 2SD1616A
G H
TO-92
CLASSIFICATION OF hFE(1)
Product-Rank Range 2SB1116A-L 135~270 2SB1116A-K 200~400 2SB1116A-U 300~600
K A
1Emitter 2Collector 3Base
J D
REF. Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76
B
E
C
F
A B C D E F G H J K
Collector
2 3
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipatio... |
Document |
2SB1116A Data Sheet
PDF 191.73KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SB1116 |
NEC |
PNP SILICON TRANSISTORS | |
2 | 2SB1116 |
UTC |
PNP EPITAXIAL SILICON TRANSISTOR | |
3 | 2SB1116 |
Weitron |
PNP General Purpose Transistor | |
4 | 2SB1116 |
JCST |
PNP Transistor | |
5 | 2SB1116 |
SeCoS |
PNP Plastic Encapsulated Transistor | |
6 | 2SB1116A |
NEC |
PNP SILICON TRANSISTORS |