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2SB1116A |
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| Part Number | 2SB1116A |
| Manufacturer | JCST |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SB1116/1116A TRANSISTOR (PNP) TO-92 FEATURES · High Collector Power Dissipation . · Complementary to 2SD161... |
| Features |
· High Collector Power Dissipation . · Complementary to 2SD1616/2SD1616A 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. BASE Symbol Parameter Value Unit VCBO Collector-Base Voltage 2SB1116 2SB1116A -60 -80 V VCEO Collector-Emitter Voltage 2SB1116 2SB1116A -50 -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -1 A PC Collector Power Dissipation 0.75 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collect... |
| Document |
 2SB1116A Data Sheet
PDF 291.27KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1116 |
NEC |
PNP SILICON TRANSISTORS |
|
| 2 | 2SB1116 |
UTC |
PNP EPITAXIAL SILICON TRANSISTOR |
|
| 3 | 2SB1116 |
Weitron |
PNP General Purpose Transistor |
|
| 4 | 2SB1116 |
JCST |
PNP Transistor |
|
| 5 | 2SB1116 |
SeCoS |
PNP Plastic Encapsulated Transistor |
|
| 6 | 2SB1116A |
NEC |
PNP SILICON TRANSISTORS |
|
Desde 2024. D4U Semiconductor.
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