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2SB624 Silicon Transistor

2SB624


2SB624
2SB624 2SB624
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Part Number 2SB624
Manufacturer GME
Description Production specification Silicon Epitaxial Planar Transistor FEATURES  High DC current gain.hFE: 200TYP (VCE=-1.0V,IC=-100mA)  Complimentary to the 2SD596. Pb Lead-free 2SB624 APPLICATIONS  Audio frequency amplifier.  Switching appilication. ORDERING INFORMATION Type No. Marking 2SB624 BV1/BV2/BV3/BV4/BV5 SOT-23 Package Code SOT-23 MAXIMUM RA.
Features
 High DC current gain.hFE: 200TYP (VCE=-1.0V,IC=-100mA)
 Complimentary to the 2SD596. Pb Lead-free 2SB624 APPLICATIONS
 Audio frequency amplifier.
 Switching appilication. ORDERING INFORMATION Type No. Marking 2SB624 BV1/BV2/BV3/BV4/BV5 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -30 VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage -25 -5 IC Collector Current -Continuous -700 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA .
Datasheet Datasheet 2SB624 Data Sheet
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2SB624

Part Number 2SB624
Manufacturer SeCoS
Title PNP Transistor
Description Elektronische Bauelemente 2SB624 -0.7A , -30V PNP Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  High DC Current Gain. hFE:200 (Typ.) (VCE= -1V, IC= -100mA)  Complimentary to 2SD596 MARKING Product-Rank 2SB624-BV1 2SB624-.
Features
 High DC Current Gain. hFE:200 (Typ.) (VCE= -1V, IC= -100mA)
 Complimentary to 2SD596 MARKING Product-Rank 2SB624-BV1 2SB624-BV2 2SB624-BV3 Range 110~180 135~220 170~270 Product-Rank 2SB624-BV4 2SB624-BV5 Range 200~320 250~400 PACKAGE INFORMATION Package MPQ SOT-23 3K LeaderSize 7’ inch SOT-23 A L 3 Top View CB 12 KE 3 1 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2..




2SB624

Part Number 2SB624
Manufacturer INCHANGE
Title PNP Transistor
Description ·SOT-23 plastic-encapsulate transistors ·High DC current gain:hFE=200(TYP) @VCE = -1V, IC = -100mA ·Complementary to 2SD596 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency general purpose amplifier ABSOLUTE MAXIMUM RATI.
Features nt Gain IC= -100mA ; VCE= -1V hFE-2 DC Current Gain IC= -700mA ; VCE= -1V fT Current-Gain—Bandwidth Product IC= -10mA ; VCE=- 6V VCE(sat) Collector-Emitter Saturation Voltage IC= -700mA; IB= -70mA VBE(on) Base-Emitter On Voltage IC=-10mA; VCE= -6V  hFE-1 Classification Marking BV1 BV2 BV3 BV4 BV5 hFE 110-180 135-220 170-270 200-320 250-400 2SB624 MIN TYP. MAX UNIT -0.1 μA -0.




2SB624

Part Number 2SB624
Manufacturer NEC
Title PNP Transistor
Description .
Features .




2SB624

Part Number 2SB624
Manufacturer TRANSYS
Title PNP Transistor
Description Transys Electronics LIMITED SOT-23-3L Plastic-Encapsulated Transistors 2SB624 TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: -0.7 Collector-base voltage A V(BR)CBO: -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ .
Features Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: -0.7 Collector-base voltage A V(BR)CBO: -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ SOT-23-3L 1. BASE 2. EMITTER 3. COLLECTOR 2. 80¡ À0. 05 1. 60¡ À0. 05 1. 9 0. 95¡ À0. 025 1. 02 0. 35 2. 92¡ À0. 05 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-.




2SB624

Part Number 2SB624
Manufacturer JCET
Title PNP Transistor
Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 TRANSISTOR (PNP) FEATURES z High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) z Complimentary to 2SD596. SOT-23 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol.
Features z High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) z Complimentary to 2SD596. SOT-23 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -700 mA PD Total Device Dissipation 200 mW TJ Jun.




2SB624

Part Number 2SB624
Manufacturer WEITRON
Title PNP Transistor
Description PNP Epitaxial Planar Transistors P b Lead(Pb)-Free ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PD Tj Tstg 2SB62.
Features .




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