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2SB601 |
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| Part Number | 2SB601 |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain- : hFE = 2000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low-frequency power amplifiers and low- speed switch. |
| Features | 150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -3A ,IB= -3mA VBE(sat) Base-Emitter Saturation Voltage IC= -3A ,IB= -3mA ICBO Collector Cutoff Current VCB= -100V, IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -3A ; VCE= -2V hFE-2 DC Current Gain IC= -5A ; VCE= -2V hFE-1 Classifications M L K 2000-5000 3000-7000 5000-15000 2SB601 . |
| Datasheet |
 2SB601 Data Sheet
PDF 214.99KB |
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2SB601 |
| Part Number | 2SB601 |
| Manufacturer | NEC |
| Title | PNP Transistor |
| Description | of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full r. |
| Features |
• High-DC current gain due to Darlington connection • Low collector saturation voltage • Low collector cutoff current • Ideal for use in direct drive from IC output for magnet drivers such as treminal equipment or cash registers PACKAGE DRAWING (UNIT: mm) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector curren. |
2SB601 |
| Part Number | 2SB601 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For low-frequency power amplifier and low-speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SB601 Absolute maximum ratings(Tc=25 ) SYM. |
| Features | ration voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance CONDITIONS IC=-3A, IB1=-3mA,L=1mH IC=-3A ,IB=-3mA IC=-3A ,IB=-3mA VCB=-100V, IE=0 VCE=-100V, VBE=-1.5V Ta=25 VEB=-5V; IC=0 IC=-3A ; VCE=-2V IC=-5A ; VCE=-2V IE=0 ; VCB=-10V,f=0.1MHz 2000 500 MIN -100 TYP. 2SB601 SYMBOL VCEO(. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB600 |
INCHANGE |
PNP Transistor |
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| 2 | 2SB600 |
SavantIC |
SILICON POWER TRANSISTOR |
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| 3 | 2SB604 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SB605 |
NEC |
PNP SILICON TRANSISTOR |
|
| 5 | 2SB608 |
INCHANGE |
PNP Transistor |
|
| 6 | 2SB609 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SB609 |
INCHANGE |
PNP Transistor |
|
| 8 | 2SB611 |
INCHANGE |
Silicon PNP Power Transistor |
|
| 9 | 2SB612 |
INCHANGE |
PNP Transistor |
|
| 10 | 2SB613 |
INCHANGE |
PNP Transistor |
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Desde 2024. D4U Semiconductor.
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