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2SB625 |
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| Part Number | 2SB625 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.) @IC= -5A ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) S. |
| Features | Breakdown Voltage IC= -10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 V(BR)CBO Collector-Base breakdown voltage IC=-1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -5V ICBO Collector Cutoff Current VCB= -100V; IE= 0 ICEO Collector Cutoff Current VCE= -100V; IB= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE -1 DC Current Gain IC= -1A; VCE= -5V hFE -2 DC Current Gain IC= -5A; VCE= -5V fT Current-Gain—Bandwidth Product IC=-0.5A ; VCE= -10V MIN TYP. MAX UNIT -100 V -8 V . |
| Datasheet |
 2SB625 Data Sheet
PDF 175.31KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB621 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 2 | 2SB621A |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 3 | 2SB624 |
NEC |
PNP Transistor |
|
| 4 | 2SB624 |
GME |
Silicon Transistor |
|
| 5 | 2SB624 |
INCHANGE |
PNP Transistor |
|
| 6 | 2SB624 |
SeCoS |
PNP Transistor |
|
| 7 | 2SB624 |
JCET |
PNP Transistor |
|
| 8 | 2SB624 |
TRANSYS |
PNP Transistor |
|
| 9 | 2SB624 |
WEITRON |
PNP Transistor |
|
| 10 | 2SB624-HF |
Kexin |
PNP Transistors |
|
Desde 2024. D4U Semiconductor.
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