Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SB649A |
| Part Number | 2SB649A |
| Manufacturer | LGE |
| Title | PNP Transistor |
| Description | 2SB649/2SB649A(PNP) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 7.400 7.800 2.500 1.100 2.900 1.500 Features 3 2 1 3. BASE Low frequency power amplifier complementary pair with 2SD669/A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Ba. |
| Features |
3 2
1
3. BASE
Low frequency power amplifier complementary pair with 2SD669/A
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-180
V
VCEO
Collector-Emitter Voltage 2SB649
-120
V
2SB649A
-160
VEBO
Emitter-Base Voltage
-5 V
IC
Collector Current –Continuous -1.5 A PC Collector Power Dissipation 1 W TJ Junction Temper. |
2SB649A |
| Part Number | 2SB649A |
| Manufacturer | Hitachi Semiconductor |
| Title | Silicon PNP Transistor |
| Description | 2SB649, 2SB649A Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD669/A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 2SB649, 2SB649A Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Em. |
| Features |
nditions I C = –1 mA, IE = 0 I C = –10 mA, RBE = ∞ I E = –1 mA, IC = 0 VCB = –160 V, IE = 0 VCE = –5 V, I C = –150 mA VCE = –5 V, I C = –500 mA*2 I C = –500 mA, I B = –50 mA VCE = –5 V, I C = –150 mA VCE = –5 V, I C = –150 mA VCB = –10 V, IE = 0, f = 1 MHz Min Typ –180 — –120 — –5 — 60 30 — — — — — — — — — — 140 27 –180 — –160 — –5 — 60 30 — — — — — — — — — — 140 27 DC current transfer ratio . |
2SB649A |
| Part Number | 2SB649A |
| Manufacturer | SavantIC |
| Title | Silicon PNP Power Transistors |
| Description | ·With TO-126 package ·Complement to type 2SD669/669A ·High breakdown voltage VCEO:-120/-160V ·High current -1.5A ·Low saturation voltage,excellent hFE linearity APPLICATIONS ·For low-frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base B. |
| Features | . |
2SB649A |
| Part Number | 2SB649A |
| Manufacturer | UTC |
| Title | BIPOLAR POWER TRANSISTOR |
| Description | UNISONIC TECHNOLOGIES CO., LTD 2SB649/A BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A PNP SILICON TRANSISTOR 1 SOT-89 1 TO-126 1 TO-126C 1 TO-92 www.DataSheet4U.com *Pb-free plating product number: 2SB649L/2SB649A. |
| Features | Box, K: Bulk, R: Tape Reel (2) AB3: SOT-89, T6C: TO-126C, T60: TO-126, T 92: TO-92 (3) x: refer to Classification of hFE (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R204-006,D 2SB649/A PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Collector Power D. |
2SB649A |
| Part Number | 2SB649A |
| Manufacturer | SeCoS |
| Title | PNP Transistor |
| Description | 2SB649/2SB649A Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free PNP Type Plastic Encapsulate Transistors TO-126C 8.0±0.2 2.0±0.2 4.14±0.1 3.2±0.2 FEATURES Power smplifier applications Power dissipation PCM : 1 W £¨ Tamb=25¡æ £© Collector current ICM . |
| Features | Power smplifier applications Power dissipation PCM : 1 W £¨ Tamb=25¡æ £© Collector current ICM : - 1.5 A Collector-base voltage V(BR)CBO : -180 V Collector-emitter voltage VCEO 2SB649 : -120 V 2SB649A : -160 V Operating and storage junction temperature range TJ£¬Tstg: -55¡æ to +150 ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage. |
2SB649A |
| Part Number | 2SB649A |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon PNP transistor |
| Description | TO-126 PNP 。Silicon PNP transistor in a TO-126 Plastic Package. / Features 2SD669(A)。 Complementary pair with 2SD669(A). / Applications 。 Low frequency power amplifier. / Equivalent Circuit / Pinning 12 3 PIN1：Emitter PIN 2：Collector PIN 3：Base / hFE Classifications & Marking . |
| Features | 2SD669(A)。 Complementary pair with 2SD669(A). / Applications 。 Low frequency power amplifier. / Equivalent Circuit / Pinning 12 3 PIN1：Emitter PIN 2：Collector PIN 3：Base / hFE Classifications & Marking hFE Classifications Symbol hFE Range B 60～120 C 100～200 D 160～320 http://www.fsbrec.com 1/6 2SB649(A) Rev.F Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector. |
2SB649A |
| Part Number | 2SB649A |
| Manufacturer | Weitron Technology |
| Title | PNP Transistor |
| Description | 2SB649/2SB649A PNP Epitaxial Planar Transistors P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 TO-126C ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Power Disspation Junction Temperature Storage Temperat. |
| Features | VCE = -5.0V, IC = -150mA VCE = -5.0V, IC = -500mA Collector-Emitter Saturation Voltage IC = -500mA, IB = -50mA Base-Emitter Voltage VCE = -5.0V, I C = -150mA Transition frequency VCE = -5.0V, I C = -150mA Collecotr Output Capacitance VCB = -10V, I E = 0, f = 1MHz 2SB649 2SB649A hFE(1) 60 60 30 140 27 320 200 -1.0 -1.5 V V MHz pF - hFE(2) VCE(sat) VBE fT Cob - CLASSIFICATION OF hFE(1) Rank Ran. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB649 |
Hitachi Semiconductor |
Silicon PNP Transistor |
|
| 2 | 2SB649 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 3 | 2SB649 |
LGE |
PNP Transistor |
|
| 4 | 2SB649 |
SavantIC |
Silicon PNP Power Transistors |
|
| 5 | 2SB649 |
UTC |
BIPOLAR POWER TRANSISTOR |
|
| 6 | 2SB649 |
Weitron Technology |
PNP Transistor |
|
| 7 | 2SB649 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 8 | 2SB649 |
SeCoS |
PNP Transistor |
|
| 9 | 2SB649 |
JCST |
PNP Transistor |
|
| 10 | 2SB649AM |
NELL SEMICONDUCTOR |
Bipolar General Purpose PNP Power Transistor |
|
Desde 2024. D4U Semiconductor.
|