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2SB649A |
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| Part Number | 2SB649A |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SB649, 2SB649A Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD669/A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 2SB649, 2SB649A Absolut... |
| Features |
nditions I C = –1 mA, IE = 0 I C = –10 mA, RBE = ∞ I E = –1 mA, IC = 0 VCB = –160 V, IE = 0 VCE = –5 V, I C = –150 mA VCE = –5 V, I C = –500 mA*2 I C = –500 mA, I B = –50 mA VCE = –5 V, I C = –150 mA VCE = –5 V, I C = –150 mA VCB = –10 V, IE = 0, f = 1 MHz Min Typ –180 — –120 — –5 — 60 30 — — — — — — — — — — 140 27 –180 — –160 — –5 — 60 30 — — — — — — — — — — 140 27 DC current transfer ratio hFE1* hFE2 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Gain bandwidth product f T Collector output capacitance Cob Notes: 1. The 2SB649 and 2SB649A are grouped by h... |
| Document |
 2SB649A Data Sheet
PDF 35.81KB |
Similar Datasheet
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