Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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2SB1412 |
| Part Number | 2SB1412 |
| Manufacturer | SeCoS |
| Title | PNP Silicon Transistor |
| Description | Elektronische Bauelemente 2SB1412 -5A , -30V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Designed for general Low VCE(sat) D-Pack (TO-252) CLASSIFICATION OF hFE Product-Rank 2SB1412-P 2SB1412-Q Range 82~180 120~270 2SB14. |
| Features | Designed for general Low VCE(sat) D-Pack (TO-252) CLASSIFICATION OF hFE Product-Rank 2SB1412-P 2SB1412-Q Range 82~180 120~270 2SB1412-R 180~390 A BC D PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch Collector 2 1 Base 3 Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Collector to Base Voltage Collector to Emitter Vo. |
2SB1412 |
| Part Number | 2SB1412 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·Low collector-to-emitter saturation voltage : VCE(sat)= -1.0V(Max)@IC= -4A ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETE. |
| Features | -Base Breakdown Voltage IC= -50uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50uA; IC= 0 ICBO Collector Cutoff Current VCB= -20V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -0.5A; VCE= -2V COB Output Capacitance IE= 0; VCB= -20V; f= 1.0MHz fT Current-Gain—Bandwidth Product IC= -50m. |
2SB1412 |
| Part Number | 2SB1412 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon PNP transistor |
| Description | TO-252 PNP 。Silicon PNP transistor in a TO-252 Plastic Package. / Features ,， 2SD2118 。 Low VCE(sat),excellent DC current gain characteristics, complements the 2SD2118. / Applications 。 Medium power amplifier applications. / Equivalent Circuit / Pinning 12 3 4 PIN1：Base PIN 2,4：. |
| Features | ,， 2SD2118 。 Low VCE(sat),excellent DC current gain characteristics, complements the 2SD2118. / Applications 。 Medium power amplifier applications. / Equivalent Circuit / Pinning 12 3 4 PIN1：Base PIN 2,4：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range P 82～180 Q 120～270 R 180～390 http://www.fsbrec.com 1/6 2SB1412 Rev.E May.-2016 . |
2SB1412 |
| Part Number | 2SB1412 |
| Manufacturer | UTC |
| Title | HIGH VOLTAGE SWITCHING TRANSISTOR |
| Description | The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SB1412L-x-TN3-R 2SB1412G-x-TN3-R TO-252 . |
| Features | * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SB1412L-x-TN3-R 2SB1412G-x-TN3-R TO-252 Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 123 BCE Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd . |
2SB1412 |
| Part Number | 2SB1412 |
| Manufacturer | Kexin |
| Title | Low Frequency Transistor |
| Description | SMD Type Low Frequency Transistor 2SB1412 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low VCE(sat). +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -. |
| Features | Low VCE(sat). +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 PNP silicon transistor. 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current p. |
2SB1412 |
| Part Number | 2SB1412 |
| Manufacturer | Weitron Technology |
| Title | PNP Transistor |
| Description | 2SB1412 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1.BASE 2.COLLECTOR 3.EMITTER 2 3 Features: * Excellent DC Current Gain Characteristics * Low VCE(Sat) 1 D-PAK(TO-252) Mechanical Data: * Case : Molded Plastic * Weight : 0.925 grams ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Collector to B. |
| Features | * Excellent DC Current Gain Characteristics * Low VCE(Sat) 1 D-PAK(TO-252) Mechanical Data: * Case : Molded Plastic * Weight : 0.925 grams ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Total Device Disspation TA = 25°C Junction Temperature Storage Temperature Symbol www.DataSheet4U.com Value -30 -20. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1411 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 2 | 2SB1411 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SB1411 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SB1414 |
Panasonic |
Silicon PNP epitaxial planar type Transistor |
|
| 5 | 2SB1416 |
Panasonic |
Silicon PNP epitaxial planar type Transistor |
|
| 6 | 2SB1417 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor |
|
| 7 | 2SB1417A |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor |
|
| 8 | 2SB1418 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Darlington |
|
| 9 | 2SB1418A |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Darlington |
|
| 10 | 2SB1419 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|