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2SB1412 |
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| Part Number | 2SB1412 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Low collector-to-emitter saturation voltage : VCE(sat)= -1.0V(Max)@IC= -4A ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable opera... |
| Features |
-Base Breakdown Voltage IC= -50uA; IB= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -50uA; IC= 0
ICBO
Collector Cutoff Current
VCB= -20V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -0.5A; VCE= -2V
COB
Output Capacitance
IE= 0; VCB= -20V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product IC= -50mA; VCE= -6V
hFE1 Classifications P Q R 82-180 120-270 180-390 2SB1412 MIN TYP. MAX UNIT -1.0 V -30 V -20 V -6 V -0.5 uA -0.5 uA 82 390 60 pF 120 MHz isc website：www.iscsemi.co... |
| Document |
 2SB1412 Data Sheet
PDF 253.65KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1411 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 2 | 2SB1411 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SB1411 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SB1412 |
Rohm |
Low Frequency Transistor |
|
| 5 | 2SB1412 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 6 | 2SB1412 |
Weitron Technology |
PNP Transistor |
|
Desde 2024. D4U Semiconductor.
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