Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SB1411 |
| Part Number | 2SB1411 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220F package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Switching applications ·Hammer drive ,pulse motor drive applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (T. |
| Features | tter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;IB=0 IC=-5A; IB=-5mA IC=-5A; IB=-5mA VCB=-110V; IE=0 VEB=-5V; IC=0 IC=-5A ; VCE=-4V IC=-0.5A ; VCE=-12V f=1MHz;VCB=-10V 5000 MIN -110 2SB1411 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB TYP. MAX . |
2SB1411 |
| Part Number | 2SB1411 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -1A) ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -1A, IB= -2mA) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation 2SB1411 APPLI. |
| Features | Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1A; IB= -2mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -2A; IB= -8mA VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -2mA ICBO Collector Cutoff Current VCB=. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1412 |
Rohm |
Low Frequency Transistor |
|
| 2 | 2SB1412 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 3 | 2SB1412 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 4 | 2SB1412 |
Weitron Technology |
PNP Transistor |
|
| 5 | 2SB1412 |
UTC |
HIGH VOLTAGE SWITCHING TRANSISTOR |
|
| 6 | 2SB1412 |
Kexin |
Low Frequency Transistor |
|
| 7 | 2SB1412 |
SeCoS |
PNP Silicon Transistor |
|
| 8 | 2SB1414 |
Panasonic |
Silicon PNP epitaxial planar type Transistor |
|
| 9 | 2SB1416 |
Panasonic |
Silicon PNP epitaxial planar type Transistor |
|
| 10 | 2SB1417 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor |
|
Desde 2024. D4U Semiconductor.
|