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2SB1412 |
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| Part Number | 2SB1412 |
| Manufacturer | ROHM (https://www.rohm.com/) |
| Description | Low frequency transistor (−20V,−5A) 2SB1412 zFeatures 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2118. zStruct... |
| Features |
1) Low VCE(sat).
VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2118.
zStructure Epitaxial planar type PNP silicon transistor
zDimensions (Unit : mm)
2SB1412
ROHM : CPT3 EIAJ : SC-63
∗ Denotes hFE
(1) Base (2) Collector (3) Emitter
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
−30
Collector-emitter voltage
VCEO
−20
Emitter-base voltage
VEBO
−6
Collector current
−5 IC
−10
Collector power
dissipation
2SB1412
PC
1 10
Junction temperature
Tj
150
Storage temperatu... |
| Document |
 2SB1412 Data Sheet
PDF 125.32KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1411 |
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| 2 | 2SB1411 |
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SILICON POWER TRANSISTOR |
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| 3 | 2SB1411 |
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| 4 | 2SB1412 |
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| 5 | 2SB1412 |
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| 6 | 2SB1412 |
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Desde 2024. D4U Semiconductor.
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