2SB1412 |
Part Number | 2SB1412 |
Manufacturer | Weitron Technology |
Description | 2SB1412 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1.BASE 2.COLLECTOR 3.EMITTER 2 3 Features: * Excellent DC Current Gain Characteristics * Low VCE(Sat) 1 D-PAK(TO-252) Mechanical Data: * C... |
Features |
* Excellent DC Current Gain Characteristics * Low VCE(Sat)
1
D-PAK(TO-252)
Mechanical Data:
* Case : Molded Plastic * Weight : 0.925 grams
ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Total Device Disspation TA = 25°C Junction Temperature Storage Temperature Symbol
www.DataSheet4U.com
Value -30 -20 -6 -5 1.0 +150 -55 to +150
Unit V V V A W ˚C ˚C
VCBO VCEO VEBO IC PD Tj Tstg
Device Marking 2SB1412 = B1412
WEITRON
http://www.weitron.com.tw
1/4
28-Oct-05
2SB1412
ELECTRICAL CHARACTERISTICS C... |
Document |
2SB1412 Data Sheet
PDF 274.28KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SB1411 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
2 | 2SB1411 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | 2SB1411 |
INCHANGE |
PNP Transistor | |
4 | 2SB1412 |
Rohm |
Low Frequency Transistor | |
5 | 2SB1412 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
6 | 2SB1412 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |