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Intersil Corporation |
N-Channel Power MOSFET • 20A, 500V • rDS(ON) = 0.270Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surf |
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Intersil Corporation |
N-Channel Power MOSFET • 13A, 500V • rDS(ON) = 0.400Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surf |
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Intersil Corporation |
N-Channel Power MOSFET • 2.0A, 250V • rDS(ON) = 2.0Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surfa |
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Intersil Corporation |
P-Channel Power MOSFET • 11A, 200V • rDS(ON) = 0.500Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334, “Guidelines for Soldering Sur |
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Intersil Corporation |
N-Channel Power MOSFET • 18A, 200V • rDS(ON) = 0.180Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334, “Guidelines for Soldering Sur |
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Intersil Corporation |
N-Channel Power MOSFET • 14A, 100V • rDS(ON) = 0.160Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surf |
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Intersil Corporation |
N-Channel Power MOSFET • 2.2A and 2.5A, 450V and 500V • rDS(ON) = 3.0Ω and 4.0Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for |
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Intersil Corporation |
N-Channel Power MOSFET • 2.2A and 2.5A, 450V and 500V • rDS(ON) = 3.0Ω and 4.0Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for |
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Intersil Corporation |
IRF9232 • -5.5A and -6.5A, -150V and -200V • rDS(ON) = 0.8Ω and 1.2Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334, |
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Intersil Corporation |
N-Channel Power MOSFET • 28A, 100V • rDS(ON) = 0.077Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device Symbol D Ordering Information P |
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Intersil Corporation |
N-Channel Power MOSFET • 30A, 200V • rDS(ON) = 0.085Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surf |
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Intersil Corporation |
N-Channel Power MOSFET • 2.2A and 2.5A, 450V and 500V • rDS(ON) = 3.0Ω and 4.0Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for |
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Intersil Corporation |
N-Channel Power MOSFET • 2.2A and 2.5A, 450V and 500V • rDS(ON) = 3.0Ω and 4.0Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for |
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Intersil Corporation |
N-Channel Power MOSFET • 5.5A, 400V • rDS(ON) = 1.000Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Sur |
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Intersil Corporation |
P-Channel Power MOSFET • -12A, -100V • rDS(ON) = 0.30Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance Symbol D Ordering Information PART NUMBER IRF9130 PACKAG |
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Intersil Corporation |
P-Channel Power MOSFET • 12A, 100V • rDS(ON) = 0.300Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334, “Guidelines for Soldering Sur |
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Intersil Corporation |
P-Channel Power MOSFET • 19A, 100V • rDS(ON) = 0.200Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surf |
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Intersil Corporation |
N-Channel Power MOSFET • 3.5A, 100V • rDS(ON) = 0.600Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Sur |
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Intersil Corporation |
N-Channel Power MOSFET • 8A, 500V • rDS(ON) = 0.850Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guid |
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Intersil Corporation |
N-Channel Power MOSFET • 9.2A, 100V • rDS(ON) = 0.270Ω • SOA is Power Dissipation Limited • Single Pulse Avalanche Energy Rated • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Sur |
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Desde 2024. D4U Semiconductor.
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