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| Distributor | Stock | Price | Buy |
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IRF250 |
| Part Number | IRF250 |
| Manufacturer | Seme LAB |
| Title | N-Channel Power MOSFET |
| Description | IRF250 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES • HERMETICALLY SEALED TO–3 METAL PACKAGE 7.87 (0.310) 6.99 (0.275) 1 20.32 (0.800) 18.80 (0.740) dia. 1.78 (0.070) 1.5. |
| Features |
• HERMETICALLY SEALED TO –3 METAL PACKAGE 7.87 (0.310) 6.99 (0.275) 1 20.32 (0.800) 18.80 (0.740) dia. 1.78 (0.070) 1.52 (0.060) 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 2 200V 30A 0.085Ω • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE 1.57 (0.062) 1.47 (0.058) dia. 2 plcs. TO –3 Metal Package Pin 1 – Gate Pin 2 – Source Case – Drain . |
IRF250 |
| Part Number | IRF250 |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.085Ω(Max) ·Nanosecond Switching Speed APPLICATIONS ·Switching power supplies ·Switching converters,motor driver,relay driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER V. |
| Features | CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=16A IGSS Gate Source Leakage Current VGS=±20V;VDS=0 IDSS Zero Gate Voltage Drain Current VDS=200V; VGS=0 VSD Diode Forward Voltage IS=30A; VGS=0 Ciss Input Capacitance Crss Re. |
IRF250 |
| Part Number | IRF250 |
| Manufacturer | International Rectifier |
| Title | HEXFET TRANSISTORS |
| Description | PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS JANTX2N6766 JANTXV2N6766 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number BVDSS IRF250 200V RDS(on) 0.085Ω ID 30A The HEXFETtechnology is the key to International Rectif. |
| Features | n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling Absolute Maximum Ratings ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Volta. |
IRF250 |
| Part Number | IRF250 |
| Manufacturer | Samsung semiconductor |
| Title | N-Channel Power MOSFET |
| Description | . |
| Features | . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF250P224 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IRF250P224 |
Infineon |
MOSFET |
|
| 3 | IRF250P225 |
Infineon |
MOSFET |
|
| 4 | IRF250P225 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IRF250SMD |
Seme LAB |
N-Channel Power MOSFET |
|
| 6 | IRF251 |
Samsung semiconductor |
N-Channel Power MOSFET |
|
| 7 | IRF251 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 8 | IRF252 |
Samsung semiconductor |
N-Channel Power MOSFET |
|
| 9 | IRF252 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 10 | IRF253 |
Samsung semiconductor |
N-Channel Power MOSFET |
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Desde 2024. D4U Semiconductor.
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