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| Part Number | IRF253 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | IRF253 |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | ·Drain Current –ID=25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.12Ω(Max) ·Nanosecond Switching Speed APPLICATIONS ·Switching power supplies ·Switching converters,motor driver,relay driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VA. |
| Features |
cification
IRF253
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS(TH) Gate Threshold Voltage VGS=0; ID=250µA VDS= VGS; ID=250µA RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=16A IGSS Gate Source Leakage Current VGS=±20V;VDS=0 IDSS Zero Gate Voltage Drain Current VDS=150V; VGS=0 VSD Diode Forward Voltage IS=25A; VGS=0 . |
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Desde 2024. D4U Semiconductor.
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