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IRF440 N-Channel Power MOSFET

IRF440

IRF440
IRF440 IRF440
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Part Number IRF440
Manufacturer Samsung semiconductor
Description .
Features .
Datasheet Datasheet IRF440 Data Sheet
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IRF440

Fairchild Semiconductor
IRF440
Part Number IRF440
Manufacturer Fairchild Semiconductor
Title N-Channel Power MOSFET
Description .
Features .


IRF440

Inchange Semiconductor
IRF440
Part Number IRF440
Manufacturer Inchange Semiconductor
Title N-Channel MOSFET Transistor
Description ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speeds ·IDSS,VDS(on),SOA and VGS(th) specified at Elevated temperature ·Rugged APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid .
Features emiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF440
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 4.4A IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage .


IRF440

Intersil Corporation
IRF440
Part Number IRF440
Manufacturer Intersil Corporation
Title N-Channel Power MOSFET
Description IRF440 Data Sheet March 1999 File Number 2308.3 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode .
Features
• 8A, 500V
• rDS(ON) = 0.850Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” BRAND Ordering Information PART NUMBER IRF440 PACKAGE TO-204AE IRF440 Symbol D NOTE: Wh.


IRF440

International Rectifier
IRF440
Part Number IRF440
Manufacturer International Rectifier
Title N-Channel Power MOSFET
Description HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high trans conductance; superior reverse energy and diode recovery dv.
Features
 Repetitive Avalanche Ratings
 Dynamic dv/dt Rating
 Hermetically Sealed
 Simple Drive Requirements
 ESD Rating: Class 2 per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drain Current  PD @TC = 25°C Maximum Power Dissipation Linear Der.


IRF440

ART CHIP
IRF440
Part Number IRF440
Manufacturer ART CHIP
Title N-Channel Power MOSFET
Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. z VGS Rated at ±20V z Silicon Gate for Fast Switching Speeds z IDSS, VDS(o.
Features se R ӨJA Thermal Resistance, Junction to Ambient PD Total Power Dissipation at Tc=25¥ Notes Rating IRF440/442 IRF840/842 MTM7N50 500 500 ±20 -50 to +150 275 IRF440/441 IRF840/841 0.85 8 32 1.0 60 125 IRF442/443 IRF842/843 1.1 7 28 1.0 60 125 For Information concerning connection diagram and package outline, refer to Section 7. Rating IRF441/443 IRF841/843 MTM7n45 450 450 ±20 -50 to +15.


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