| Description | IRF9130 Data Sheet February 1999 File Number 2220.3 -12A, -100V, 0.30 Ohm, P-Channel Power MOSFET These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdow... |
| Features |
• -12A, -100V • rDS(ON) = 0.30Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance Symbol D Ordering Information PART NUMBER IRF9130 PACKAGE TO-204AA BRAND IRF9130 G S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) ... |
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Seme LAB |
P-Channel Power MOSFET |
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Samsung semiconductor |
P-Channel Power MOSFET |
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Samsung semiconductor |
P-Channel Power MOSFET |
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Samsung semiconductor |
P-Channel Power MOSFET |
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Seme LAB |
P-Channel Power MOSFET |
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Intersil Corporation |
P-Channel Power MOSFET |
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Samsung Electronics |
(IRF9140 - IRF9143) P-Channel Power MOSFETs |
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International Rectifier |
Repetitive Avalanche and dv/dt Rated Power MOSFET |
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Samsung Electronics |
(IRF9140 - IRF9143) P-Channel Power MOSFETs |
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International Rectifier |
(IRF9140 - IRF9143) P-Channel 100V Power MOSFETs |
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