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IRF9130 |
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| Part Number | IRF9130 |
| Manufacturer | International Rectifier |
| Description | HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-... |
| Features |
Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements ESD Rating: Class 1C per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = -10V, TC = 25°C Continuous Drain Current ID2 @ VGS = -10V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery TJ Operating Junction and TSTG... |
| Document |
 IRF9130 Data Sheet
PDF 828.17KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF9130 |
Samsung semiconductor |
P-Channel Power MOSFET |
|
| 2 | IRF9130 |
Seme LAB |
P-Channel Power MOSFET |
|
| 3 | IRF9130 |
Intersil Corporation |
P-Channel Power MOSFET |
|
| 4 | IRF9130SMD |
Seme LAB |
P-Channel Power MOSFET |
|
| 5 | IRF9131 |
Samsung semiconductor |
P-Channel Power MOSFET |
|
| 6 | IRF9132 |
Samsung semiconductor |
P-Channel Power MOSFET |
|
| 7 | IRF9133 |
Samsung semiconductor |
P-Channel Power MOSFET |
|
| 8 | IRF9140 |
Seme LAB |
P-Channel Power MOSFET |
|
| 9 | IRF9140 |
Intersil Corporation |
P-Channel Power MOSFET |
|
| 10 | IRF9140 |
Samsung Electronics |
(IRF9140 - IRF9143) P-Channel Power MOSFETs |
|
Desde 2024. D4U Semiconductor.
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