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IRF9140 |
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| Part Number | IRF9140 |
| Manufacturer | Seme LAB |
| Description | IRF9140 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) P–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES • HERMETICALLY SEALED TO–3 METAL PACKAGE 1 20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.52 (0.060) 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. . |
| Features |
• HERMETICALLY SEALED TO –3 METAL PACKAGE 1 20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.52 (0.060) 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 2 –100V –18A 0.2Ω • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE 1.09 (0.043) 0.97 (0.038) dia. 2 plcs. TO –3 Metal Package Pin 1 – Gate Pin 2 – Source Case – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS IAR EAR dv/dt TJ , Tstg TL Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Cur. |
| Datasheet |
 IRF9140 Data Sheet
PDF 22.17KB |
| Distributor | Stock | Price | Buy |
|---|
IRF9140 |
| Part Number | IRF9140 |
| Manufacturer | Intersil Corporation |
| Title | P-Channel Power MOSFET |
| Description | IRF9140 Data Sheet February 1999 File Number 2278.3 -19A, -100V, 0.200 Ohm, P-Channel Power MOSFET These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo. |
| Features |
• -19A, -100V • rDS(ON) = 0.200Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF9140 PACKAGE TO-204AA BRAND IRF9140 Symbol D NOTE: When ordering, include . |
IRF9140 |
| Part Number | IRF9140 |
| Manufacturer | Samsung Electronics |
| Title | (IRF9140 - IRF9143) P-Channel Power MOSFETs |
| Description | www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com . |
| Features | . |
IRF9140 |
| Part Number | IRF9140 |
| Manufacturer | International Rectifier |
| Title | Repetitive Avalanche and dv/dt Rated Power MOSFET |
| Description | HEXFET POWER MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high trans conductance; superior reverse energy and diode recove. |
| Features |
Repetitive avalanche ratings Dynamic dv/dt rating Hermetically sealed Simple drive requirements ESD rating: Class 2 per MIL-STD-750, Method 1020 Product Summary BVDSS: -100V ID : -18A RDS(on),max : 0.2 QG, max: 60nC Potential Applications DC-DC converter Motor drives Product Validation Qualified according to MIL-PRF-19500 for space applications TO-3 (TO-204AA) Descriptio. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF9141 |
Samsung Electronics |
(IRF9140 - IRF9143) P-Channel Power MOSFETs |
|
| 2 | IRF9141 |
International Rectifier |
(IRF9140 - IRF9143) P-Channel 100V Power MOSFETs |
|
| 3 | IRF9142 |
Samsung Electronics |
(IRF9140 - IRF9143) P-Channel Power MOSFETs |
|
| 4 | IRF9142 |
International Rectifier |
(IRF9140 - IRF9143) P-Channel 100V Power MOSFETs |
|
| 5 | IRF9143 |
International Rectifier |
(IRF9140 - IRF9143) P-Channel 100V Power MOSFETs |
|
| 6 | IRF9143 |
Samsung Electronics |
(IRF9140 - IRF9143) P-Channel Power MOSFETs |
|
| 7 | IRF9130 |
Samsung semiconductor |
P-Channel Power MOSFET |
|
| 8 | IRF9130 |
Seme LAB |
P-Channel Power MOSFET |
|
| 9 | IRF9130 |
Intersil Corporation |
P-Channel Power MOSFET |
|
| 10 | IRF9130 |
International Rectifier |
P-Channel Power MOSFET |
|
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