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IRF9130 |
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| Part Number | IRF9130 |
| Manufacturer | Seme LAB |
| Description | IRF9130 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) P–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES 1 11.18 (0.440) 1... |
| Features |
1
11.18 (0.440) 10.67 (0.420)
26.67 (1.050) max.
4.09 (0.161) 3.84 (0.151) dia. 2 plcs.
2
–100V –11A 0.2W 20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.52 (0.060) • HERMETICALLY SEALED TO –3 METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE 1.09 (0.043) 0.97 (0.038) dia. 2 plcs. TO –3 Metal Package Pin 1 – Gate Pin 2 – Source Case – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS IAR EAR dv/dt TJ , Tstg TL Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Cur... |
| Document |
 IRF9130 Data Sheet
PDF 19.16KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF9130 |
Samsung semiconductor |
P-Channel Power MOSFET |
|
| 2 | IRF9130 |
Intersil Corporation |
P-Channel Power MOSFET |
|
| 3 | IRF9130 |
International Rectifier |
P-Channel Power MOSFET |
|
| 4 | IRF9130SMD |
Seme LAB |
P-Channel Power MOSFET |
|
| 5 | IRF9131 |
Samsung semiconductor |
P-Channel Power MOSFET |
|
| 6 | IRF9132 |
Samsung semiconductor |
P-Channel Power MOSFET |
|
| 7 | IRF9133 |
Samsung semiconductor |
P-Channel Power MOSFET |
|
| 8 | IRF9140 |
Seme LAB |
P-Channel Power MOSFET |
|
| 9 | IRF9140 |
Intersil Corporation |
P-Channel Power MOSFET |
|
| 10 | IRF9140 |
Samsung Electronics |
(IRF9140 - IRF9143) P-Channel Power MOSFETs |
|
Desde 2024. D4U Semiconductor.
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