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IRF9130SMD |
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| Part Number | IRF9130SMD |
| Manufacturer | Seme LAB |
| Description | IRF9130SMD MECHANICAL DATA Dimensions in mm (inches) 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 3 .6... |
| Features |
1
3
1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
2
-100V -8A 0.35W
0 .7 6 (0 .0 3 0 ) m in .
9 .6 9 .3 1 1 .5 1 1 .2
7 (0 8 (0 8 (0 8 (0
.3 8 .3 6 .4 5 .4 4
1 )
9 ) 6 ) 4 )
1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 )
0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 )
• HERMETICALLY SEALED • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT • SCREENING OPTIONS AVAILABLE SMD 1 Pad 1 – Gate Pad 2 – Drain Pad 3 – Source • ALL LEADS ISOLATED FROM CASE (also available as IRFN9130SMD with Gate and Source reversed) ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg RqJC G... |
| Document |
 IRF9130SMD Data Sheet
PDF 20.73KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF9130 |
Samsung semiconductor |
P-Channel Power MOSFET |
|
| 2 | IRF9130 |
Seme LAB |
P-Channel Power MOSFET |
|
| 3 | IRF9130 |
Intersil Corporation |
P-Channel Power MOSFET |
|
| 4 | IRF9130 |
International Rectifier |
P-Channel Power MOSFET |
|
| 5 | IRF9131 |
Samsung semiconductor |
P-Channel Power MOSFET |
|
| 6 | IRF9132 |
Samsung semiconductor |
P-Channel Power MOSFET |
|
| 7 | IRF9133 |
Samsung semiconductor |
P-Channel Power MOSFET |
|
| 8 | IRF9140 |
Seme LAB |
P-Channel Power MOSFET |
|
| 9 | IRF9140 |
Intersil Corporation |
P-Channel Power MOSFET |
|
| 10 | IRF9140 |
Samsung Electronics |
(IRF9140 - IRF9143) P-Channel Power MOSFETs |
|
Desde 2024. D4U Semiconductor.
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