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IRF422 |
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| Part Number | IRF422 |
| Manufacturer | ART CHIP |
| Description | These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. z Low RDS(on) z VGS Rated at ±20V z Silicon Gate for Fast Switching Speeds z IDSS, VDS(on), Specified at Elevated Temperature. |
| Features | e, refer to Section 7. ID at Tc=100¥ 1.5A 1.5A 1.0A 1.0A 1.5A 1.5A 1.0A 1.0A 2.0A 2.0A Case Style TO-204AA TO-220AB www.artschip.com 1 IRF420-423/IRF820-823 MTP2N45/2N50 N-Channel Power MOSFETs 3.0A, 450V/500V Maximum Ratings Symbol Characteristic VDSS VDGR VGS TJ, Tstg TL Drain to Source Voltage 1 Drain to Gate Voltage 1 RGS=20kΩ Gate to Source Voltage Operating Junction and Storage Temperatures Maximum Lead Temperature for Soldering Purposes, 1/8” From Case for 5s Rating IRF420/422 IRF820/822 MTP2N50 500 500 ±20 -55 to +150 275 Maximum Thermal Characteristics RӨJC RӨJA PD IDM . |
| Datasheet |
 IRF422 Data Sheet
PDF 373.44KB |
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IRF422 |
| Part Number | IRF422 |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel Power MOSFET |
| Description | . |
| Features | . |
IRF422 |
| Part Number | IRF422 |
| Manufacturer | Samsung semiconductor |
| Title | N-Channel Power MOSFET |
| Description | . |
| Features | . |
IRF422 |
| Part Number | IRF422 |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | ·silicon Gate for fast switching at elevate ·rugged ·low drive requirements ·ease of paralleling APPLICATIONS ·high speed applications such as Switching power supplies,AC and DCmotor controls relay and solenoid driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot . |
| Features | OL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=1.4A IGSS Gate Source Leakage Current VGS=±20V;VDS=0 IDSS Zero Gate Voltage Drain Current VDS=500V; VGS=0 VSD Diode Forward Voltage IF=2.5A; VGS=0 Ciss Input Capacitance Crss Reverse Transfer Capacitance . |
IRF422 |
| Part Number | IRF422 |
| Manufacturer | Intersil Corporation |
| Title | N-Channel Power MOSFET |
| Description | These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as swi. |
| Features |
• 2.2A and 2.5A, 450V and 500V • rDS(ON) = 3.0Ω and 4.0Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Ordering Information D PART NUMBER IRF420 IRF421 IRF422 IRF423 PACKAGE TO-204AA TO-204AA TO. |
IRF422 |
| Part Number | IRF422 |
| Manufacturer | NJS |
| Title | N-Channel Power MOSFETs |
| Description | • 2.2A and 2.5A, 450V and 500V • rDS(ON)= 3-Ofi and 4.0Q • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device These are N-Channel enhancement mode silicon gate power field effect transistors. They are ad. |
| Features |
Description
• 2.2A and 2.5A, 450V and 500V • rDS(ON)= 3-Ofi and 4.0Q • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF420 |
ART CHIP |
N-Channel Power MOSFET |
|
| 2 | IRF420 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | IRF420 |
Samsung semiconductor |
N-Channel Power MOSFET |
|
| 4 | IRF420 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 5 | IRF420 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 6 | IRF420 |
NJS |
N-Channel Power MOSFETs |
|
| 7 | IRF421 |
ART CHIP |
N-Channel Power MOSFET |
|
| 8 | IRF421 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 9 | IRF421 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 10 | IRF421 |
Samsung semiconductor |
N-Channel Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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