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IRF422 |
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| Part Number | IRF422 |
| Manufacturer | Inchange Semiconductor |
| Description | ·silicon Gate for fast switching at elevate ·rugged ·low drive requirements ·ease of paralleling APPLICATIONS ·high speed applications such as Switching power supplies,AC and DCmotor controls relay a... |
| Features |
OL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=0.25mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID=250µA
RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=1.4A
IGSS Gate Source Leakage Current
VGS=±20V;VDS=0
IDSS Zero Gate Voltage Drain Current VDS=500V; VGS=0
VSD Diode Forward Voltage
IF=2.5A; VGS=0
Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance
VDS=25V; VGS=0V; fT=1MHz
tr Rise Time td(on) Turn-on Telay Time
tf Fall Time
ID=2.5A; VDD=250V; RG=18Ω
td(off) Turn-off Delay Time
isc Product Specification
IRF422
MIN TYP... |
| Document |
 IRF422 Data Sheet
PDF 42.71KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF420 |
ART CHIP |
N-Channel Power MOSFET |
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| 2 | IRF420 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
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| 3 | IRF420 |
Samsung semiconductor |
N-Channel Power MOSFET |
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| 4 | IRF420 |
Intersil Corporation |
N-Channel Power MOSFET |
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| 5 | IRF420 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
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| 6 | IRF420 |
NJS |
N-Channel Power MOSFETs |
|
| 7 | IRF421 |
ART CHIP |
N-Channel Power MOSFET |
|
| 8 | IRF421 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 9 | IRF421 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 10 | IRF421 |
Samsung semiconductor |
N-Channel Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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