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IRF422 |
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| Part Number | IRF422 |
| Manufacturer | NJS |
| Description | • 2.2A and 2.5A, 450V and 500V • rDS(ON)= 3-Ofi and 4.0Q • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier D... |
| Features |
Description
• 2.2A and 2.5A, 450V and 500V • rDS(ON)= 3-Ofi and 4.0Q • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and dri... |
| Document |
 IRF422 Data Sheet
PDF 136.58KB |
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|---|---|---|---|---|
| 1 | IRF420 |
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| 2 | IRF420 |
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| 3 | IRF420 |
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Desde 2024. D4U Semiconductor.
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