Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
IRF520 |
| Part Number | IRF520 |
| Manufacturer | International Rectifier |
| Title | Power MOSFET |
| Description | . |
| Features | . |
IRF520 |
| Part Number | IRF520 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF520 ·FEATURES ·Typical RDS(on) =0.27Ω ·Avalanche Rugged Technology ·High Current Capability ·Low Gate Charge ·175℃ Operating Temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High . |
| Features |
·Typical RDS(on) =0.27Ω ·Avalanche Rugged Technology ·High Current Capability ·Low Gate Charge ·175℃ Operating Temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Current ,High Speed Switching ·DC-DC&DC-AC Converters ·Motor Control ,Audio Amplifiers ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source . |
IRF520 |
| Part Number | IRF520 |
| Manufacturer | STMicroelectronics |
| Title | N-Channel Power MOSFET |
| Description | IRF520 IRF520FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI s s s s s s s V DSS 100 V 100 V R DS( on) < 0.27 Ω < 0.27 Ω ID 10 A 7A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURREN. |
| Features |
Temperature Max. Operating Junction Temperature
o o
Value IRF520FI 100 100 ± 20 10 7 40 70 0.47 -65 to 175 175 7 5 40 35 0.23 2000
Unit V V V A A A W W/ o C V
o o
C C
( •) Pulse width limited by safe operating area June 1993 1/9 IRF520/FI THERMAL DATA TO-220 R thj-cas e Rthj- amb R th c-s Tl Thermal Resistance Junction-case Max 2.14 62.5 0.5 300 ISOWATT220 4.29 o o o C/W C/W C/W o C The. |
IRF520 |
| Part Number | IRF520 |
| Manufacturer | Vishay |
| Title | Power MOSFET |
| Description | Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to ap. |
| Features |
• Dynamic dV/dt rating • Repetitive avalanche rated Available • 175 °C operating temperature • Fast switching Available • Ease of paralleling • Simple drive requirements Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-complia. |
IRF520 |
| Part Number | IRF520 |
| Manufacturer | Supertex Inc |
| Title | N-Channel Power MOSFET |
| Description | . |
| Features | . |
IRF520 |
| Part Number | IRF520 |
| Manufacturer | Intersil Corporation |
| Title | N-Channel Power MOSFET |
| Description | IRF520 Data Sheet November 1999 File Number 1574.4 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche . |
| Features |
• 9.2A, 100V • rDS(ON) = 0.270Ω • SOA is Power Dissipation Limited • Single Pulse Avalanche Energy Rated • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF520 PACKAGE TO-220AB BRAND IRF520 Symbol D NOTE: When ordering, use the ent. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF520A |
Fairchild Semiconductor |
Advanced Power MOSFET |
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| 2 | IRF520FI |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | IRF520FI |
STMicroelectronics |
N-Channel Power MOSFET |
|
| 4 | IRF520L |
International Rectifier |
Power MOSFET |
|
| 5 | IRF520N |
International Rectifier |
Power MOSFET |
|
| 6 | IRF520N |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IRF520NL |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IRF520NLPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 9 | IRF520NPbF |
International Rectifier |
Power MOSFET |
|
| 10 | IRF520NS |
International Rectifier |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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