IRF520 |
Part Number | IRF520 |
Manufacturer | Fairchild Semiconductor |
Description | Data Sheet January 2002 IRF520 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, ... |
Features |
• 9.2A, 100V • rDS(ON) = 0.270Ω • SOA is Power Dissipation Limited • Single Pulse Avalanche Energy Rated • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) ©2002 Fairchild Semiconductor Corporation IRF520 Rev. B IRF520 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... |
Document |
IRF520 Data Sheet
PDF 89.46KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRF520 |
STMicroelectronics |
N-Channel Power MOSFET | |
2 | IRF520 |
Supertex Inc |
N-Channel Power MOSFET | |
3 | IRF520 |
Intersil Corporation |
N-Channel Power MOSFET | |
4 | IRF520 |
Vishay |
Power MOSFET | |
5 | IRF520 |
International Rectifier |
Power MOSFET | |
6 | IRF520 |
INCHANGE |
N-Channel MOSFET |