Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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IRF9530 |
| Part Number | IRF9530 |
| Manufacturer | Intersil Corporation |
| Title | P-Channel Power MOSFET |
| Description | IRF9530, RF1S9530SM Data Sheet July 1999 File Number 2221.4 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the . |
| Features |
• 12A, 100V • rDS(ON) = 0.300Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF9530 RF1S9530SM PACKAGE TO-220AB TO-263AB BRAND IRF9530 RF1S9530 Symbol D G. |
IRF9530 |
| Part Number | IRF9530 |
| Manufacturer | INCHANGE |
| Title | P-Channel MOSFET |
| Description | isc P-Channel Mosfet Transistor INCHANGE Semiconductor IRF9530 FEATURES ·-12A，-100V ·Single pulse avalanche energy rated ·Static Drain-Source On-Resistance: RDS(on) =0.3Ω(Max) ·SOA is power dissipation limited ·Nanosecond switching speeds ·Linear transfer characteristics ·Minimum Lot-to-Lot variat. |
| Features |
·-12A，-100V ·Single pulse avalanche energy rated ·Static Drain-Source On-Resistance: RDS(on) =0.3Ω(Max) ·SOA is power dissipation limited ·Nanosecond switching speeds ·Linear transfer characteristics ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION ·The power MOSFET is designed for applications such as switching regulators,switching convertors,motor d. |
IRF9530 |
| Part Number | IRF9530 |
| Manufacturer | International Rectifier |
| Title | Power MOSFET |
| Description | . |
| Features | . |
IRF9530 |
| Part Number | IRF9530 |
| Manufacturer | Fairchild Semiconductor |
| Title | P-Channel Power MOSFETs |
| Description | Data Sheet IRF9530, RF1S9530SM January 2002 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avala. |
| Features |
• 12A, 100V • rDS(ON) = 0.300Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE JEDEC TO-263A GATE SOURCE DRAIN . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF9530-220M |
Seme LAB |
P-Channel Power MOSFET |
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| 2 | IRF9530N |
International Rectifier |
Power MOSFET |
|
| 3 | IRF9530N |
INCHANGE |
P-Channel MOSFET |
|
| 4 | IRF9530NL |
International Rectifier |
Power MOSFET |
|
| 5 | IRF9530NL |
INCHANGE |
P-Channel MOSFET |
|
| 6 | IRF9530NLPbF |
Infineon |
Power MOSFET |
|
| 7 | IRF9530NLPBF |
International Rectifier |
Power MOSFET |
|
| 8 | IRF9530NPBF |
International Rectifier |
Power MOSFET |
|
| 9 | IRF9530NS |
International Rectifier |
Power MOSFET |
|
| 10 | IRF9530NS |
VBsemi |
P-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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